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IXXH60N65B4H1

IXXH60N65B4H1
Mfr. #:
IXXH60N65B4H1
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXXH60N65B4H1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXXH60N65B4H1 DatasheetIXXH60N65B4H1 Datasheet (P4-P6)IXXH60N65B4H1 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
IXXH60N65B4H1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247AD-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.7 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
116 A
Pd - Verlustleistung:
380 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
IXXH60N65
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
60 A
Marke:
IXYS
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Handelsname:
XPT
Gewichtseinheit:
0.158733 oz
Tags
IXXH60N65B, IXXH60N65, IXXH6, IXXH, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Single Transistor, 60 A, 2.2 V, 455 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 116A 455000mW 3-Pin(3+Tab) TO-247AD
*** Stop Electro
Insulated Gate Bipolar Transistor, 145A I(C), 650V V(BR)CES, N-Channel, TO-247AD
***ure Electronics
IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT
***ment14 APAC
IGBT, SINGLE, 650V, 60A, TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
IGBT, SINGLE, 650V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 455W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins:
***ical
Trans IGBT Chip N-CH 650V 140A 455000mW 3-Pin(3+Tab) TO-247AD Tube
***ineon
Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant
***nell
IGBT, SINGLE, 650V, 140A, TO-247AD-3; DC Collector Current: 140A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 455W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AD; No.
***ical
Trans IGBT Chip N-CH 650V 90A 3-Pin(3+Tab) TO-247AD Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***ment14 APAC
ANSISTOR, BIPOL, N CH, 650V, TO-247AC
***ical
Trans IGBT Chip N-CH 650V 140A 455000mW 3-Pin(3+Tab) TO-247AC Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 140A I(C), 650V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
***ineon
Target Applications: AC-DC; Pump; Solar; UPS; Welding
*** Source Electronics
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***ark
TRANSISTOR, BIPOL, N CH, 650V, TO-247AC
*** Electronics
IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
***i-Key
IGBT 650V 120A 455W TO247AD
***S
French Electronic Distributor since 1988
*** Electronics
IGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT
***i-Key
IGBT 650V 150A 455W ISOPLUS247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IXXH60N65B4H1
DISTI # 30313635		IXYS CorporationTrans IGBT Chip N-CH 650V 116A Automotive 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		120
  • 1000:$4.3546
  • 500:$4.9997
  • 250:$5.4835
  • 100:$5.9674
  • 25:$6.6125
  • 10:$7.2576
  • 3:$8.0640
IXXH60N65B4H1
DISTI # IXXH60N65B4H1-ND		IXYS CorporationIGBT 650V 116A 380W TO247AD
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$4.5360
  • 510:$5.2080
  • 270:$5.7120
  • 120:$6.2160
  • 30:$6.8880
  • 10:$7.5600
  • 1:$8.4000
IXXH60N65B4H1
DISTI # V36:1790_15875879		IXYS CorporationTrans IGBT Chip N-CH 650V 116A Automotive 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		0
    IXXH60N65B4H1
    DISTI # V99:2348_15875879    		IXYS CorporationTrans IGBT Chip N-CH 650V 116A Automotive 3-Pin(3+Tab) TO-247AD
    RoHS: Compliant    		0
    • 1:$6.1279
    IXXH60N65B4H1
    DISTI # 03AH1966    		Littelfuse IncDISC IGBT XPT-GENX4 TO-247AD / TUBE0
    • 1000:$5.5100
    • 500:$5.8600
    • 250:$6.3100
    • 100:$6.8800
    • 1:$8.4200
    IXXH60N65B4H1
    DISTI # 747-IXXH60N65B4H1    		IXYS CorporationIGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT
    RoHS: Compliant    		0
    • 1:$8.4000
    • 10:$7.5600
    • 25:$6.8800
    • 50:$6.2900
    • 100:$6.2100
    • 250:$5.6600
    • 500:$5.2000
    • 1000:$4.5300
    IXXH60N65B4H1
    DISTI # IXXH60N65B4H1    		IXYS Corporation650V 116A 455W TO247AD
    RoHS: Compliant    		58
    • 1:€8.1500
    • 5:€5.1500
    • 30:€4.1500
    • 60:€4.0000
    IXXH60N65B4H1
    DISTI # 2470017    		IXYS CorporationIGBT, SINGLE, 650V, 60A, TO-247
    RoHS: Compliant    		0
    • 100:£4.9500
    • 50:£5.0900
    • 10:£5.4800
    • 5:£6.6700
    • 1:£7.2500
    IXXH60N65B4H1
    DISTI # 2470017    		IXYS CorporationIGBT, SINGLE, 650V, 60A, TO-247
    RoHS: Compliant    		0
    • 510:$7.7400
    • 270:$8.4900
    • 120:$9.2400
    • 30:$10.2300
    • 10:$11.2300
    • 1:$12.4700
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    Verfügbarkeit
    Aktie:
    60
    Auf Bestellung:
    2043
    Menge eingeben:
    Der aktuelle Preis von IXXH60N65B4H1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    8,40 $
    8,40 $
    10
    7,56 $
    75,60 $
    25
    6,88 $
    172,00 $
    50
    6,29 $
    314,50 $
    100
    6,21 $
    621,00 $
    250
    5,66 $
    1 415,00 $
    500
    5,20 $
    2 600,00 $
    1000
    4,53 $
    4 530,00 $
    2500
    4,48 $
    11 200,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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