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SI4488DY-T1-GE3

SI4488DY-T1-GE3
Mfr. #:
SI4488DY-T1-GE3
Hersteller:
Vishay
Beschreibung:
RF Bipolar Transistors MOSFET 150V 5.0A 3.1W 50mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4488DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4488DY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Teil-Aliasnamen
SI4488DY-GE3
Gewichtseinheit
0.017870 oz
Montageart
SMD/SMT
Paket-Koffer
SO-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
1.56 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
3.5 A
Vds-Drain-Source-Breakdown-Voltage
150 V
Rds-On-Drain-Source-Widerstand
50 mOhms
Transistor-Polarität
N-Kanal
Tags
SI4488DY-T, SI4488D, SI4488, SI448, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:5A; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,DIODE,150V,5A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.041ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4488DY-T1-GE3
DISTI # V72:2272_09216519		Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant		2972
  • 1000:$0.9829
  • 500:$1.1554
  • 250:$1.2707
  • 100:$1.3159
  • 25:$1.5285
  • 10:$1.6375
  • 1:$1.9008
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2160In Stock
  • 1000:$0.9839
  • 500:$1.1875
  • 100:$1.5268
  • 10:$1.9000
  • 1:$2.1000
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2160In Stock
  • 1000:$0.9839
  • 500:$1.1875
  • 100:$1.5268
  • 10:$1.9000
  • 1:$2.1000
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.8894
SI4488DY-T1-GE3
DISTI # 25790120		Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant		2972
  • 1000:$0.9829
  • 500:$1.1554
  • 250:$1.2707
  • 100:$1.3159
  • 25:$1.5286
  • 10:$1.6375
  • 7:$1.9008
SI4488DY-T1-GE3
DISTI # 31237008		Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant		2500
  • 2500:$0.8926
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4488DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5769
  • 5000:$0.5599
  • 10000:$0.5369
  • 15000:$0.5219
  • 25000:$0.5079
SI4488DY-T1-GE3
DISTI # 15R5041		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.041ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.1W RoHS Compliant: Yes0
  • 1:$1.4300
  • 1000:$1.3500
  • 2000:$1.2800
  • 4000:$1.1500
  • 6000:$1.1100
  • 10000:$1.0700
SI4488DY-T1-GE3
DISTI # 23T8512		Vishay IntertechnologiesMOSFET Transistor, N Channel, 5 A, 150 V, 0.041 ohm, 10 V, 2 V RoHS Compliant: Yes2229
  • 1:$2.3200
  • 10:$1.9300
  • 25:$1.7900
  • 50:$1.6400
  • 100:$1.5000
  • 250:$1.4100
  • 500:$1.3100
SI4488DY-T1-GE3
DISTI # 781-SI4488DY-GE3		Vishay IntertechnologiesMOSFET 150V Vds 20V Vgs SO-8
RoHS: Compliant		1460
  • 1:$2.3200
  • 10:$1.9300
  • 100:$1.5000
  • 500:$1.3100
  • 1000:$1.0900
  • 2500:$1.0100
SI4488DYT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3.5A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		Europe - 2500
    SI4488DY-T1-GE3
    DISTI # 1858958RL    		Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant    		0
    • 1:$3.3500
    • 10:$3.0300
    • 100:$2.4400
    • 500:$1.9000
    • 1000:$1.5700
    SI4488DY-T1-GE3
    DISTI # 1858958    		Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant    		2229
    • 1:$3.3500
    • 10:$3.0300
    • 100:$2.4400
    • 500:$1.9000
    • 1000:$1.5700
    SI4488DY-T1-GE3
    DISTI # C1S803600999653    		Vishay IntertechnologiesMOSFETs2972
    • 250:$1.2707
    • 100:$1.3159
    • 25:$1.5286
    • 10:$1.6375
    SI4488DY-T1-GE3
    DISTI # 1858958    		Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant    		2474
    • 5:£1.6100
    • 25:£1.4900
    • 100:£1.1500
    • 250:£1.0400
    • 500:£0.9380
    Bild Teil # Beschreibung
    SI4488DY-T1-GE3

    Mfr.#: SI4488DY-T1-GE3

    OMO.#: OMO-SI4488DY-T1-GE3

    		 MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-E3

    Mfr.#: SI4488DY-T1-E3

    OMO.#: OMO-SI4488DY-T1-E3

    		 MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-GE3

    Mfr.#: SI4488DY-T1-GE3

    OMO.#: OMO-SI4488DY-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 150V 5.0A 3.1W 50mohm @ 10V
    SI4488DY-T1-E3-CUT TAPE

    Mfr.#: SI4488DY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4488DY-T1-E3-CUT-TAPE-1190

    		 Neu und Original
    SI4488DY

    Mfr.#: SI4488DY

    OMO.#: OMO-SI4488DY-1190

    		 MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-E3

    Mfr.#: SI4488DY-T1-E3

    OMO.#: OMO-SI4488DY-T1-E3-VISHAY

    		 MOSFET N-CH 150V 3.5A 8-SOIC
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von SI4488DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,76 $
    0,76 $
    10
    0,72 $
    7,24 $
    100
    0,69 $
    68,57 $
    500
    0,65 $
    323,80 $
    1000
    0,61 $
    609,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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