QJD1210011

QJD1210011
Mfr. #:
QJD1210011
Hersteller:
Powerex Inc
Beschreibung:
MOSFET 2N-CH 1200V 100A SIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
QJD1210011 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
QJD12100, QJD12, QJD1, QJD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET 2N-CH 1200V 100A SIC
***hardson RFPD
SILICON CARBIDE MOSFETS
***ark
Mosfet, Dual N-Ch, 1.2Kv, 100A, Module; Transistor Polarity:dual N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.015Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
QJD1210011
DISTI # QJD1210011-ND
Powerex Power SemiconductorsMOSFET 2N-CH 1200V 100A SIC
RoHS: Compliant
Container: Bulk
Temporarily Out of Stock
    QJD1210011
    DISTI # 90W9554
    Powerex Power SemiconductorsMOSFET, DUAL N-CH, 1.2KV, 100A, MODULE,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes0
      QJD1210011
      DISTI # QJD1210011
      Powerex Power SemiconductorsSILICON CARBIDE MOSFETS
      RoHS: Not Compliant
      0
        Bild Teil # Beschreibung
        QJD1210SA1

        Mfr.#: QJD1210SA1

        OMO.#: OMO-QJD1210SA1-POWEREX

        SILICON CARBIDE POWER TRANSISTORS/MODULES
        QJD1210012

        Mfr.#: QJD1210012

        OMO.#: OMO-QJD1210012-1190

        SILICON CARBIDE POWER TRANSISTORS/MODULES
        QJD1210010

        Mfr.#: QJD1210010

        OMO.#: OMO-QJD1210010-POWEREX

        MOSFET 2N-CH 1200V 100A SIC
        QJD1210011

        Mfr.#: QJD1210011

        OMO.#: OMO-QJD1210011-POWEREX

        MOSFET 2N-CH 1200V 100A SIC
        QJD1210SB1

        Mfr.#: QJD1210SB1

        OMO.#: OMO-QJD1210SB1-POWEREX

        MOD MOSFET 1200V 10A DUAL SIC
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4000
        Menge eingeben:
        Der aktuelle Preis von QJD1210011 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
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        10
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        100
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        500
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        1000
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        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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