OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

MRF6V2150NR1

MRF6V2150NR1
Mfr. #:
MRF6V2150NR1
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors VHV6 150W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRF6V2150NR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MRF6V2150NR1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
E
Polarität des Transistors:
N-Kanal
Technologie:
Si
Vds - Drain-Source-Durchbruchspannung:
110 V
Gewinnen:
25 dB
Ausgangsleistung:
150 W
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
TO-270-4
Verpackung:
Spule
Aufbau:
Single Dual Drain Dual Gate
Höhe:
2.64 mm
Länge:
17.58 mm
Arbeitsfrequenz:
220 MHz
Serie:
MRF6V2150N
Typ:
HF-Leistungs-MOSFET
Breite:
9.07 mm
Marke:
NXP / Freescale
Kanalmodus:
Erweiterung
Feuchtigkeitsempfindlich:
ja
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 0.5 V, 12 V
Vgs th - Gate-Source-Schwellenspannung:
1.62 V
Teil # Aliase:
935316842528
Gewichtseinheit:
0.058073 oz
Tags
MRF6V2150N, MRF6V21, MRF6V2, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    G***r
    G***r
    LV

    Packing is good. The parcel came very quickly

    2019-01-10
    C***t
    C***t
    TH

    Received. Thank you reseller.

    2019-06-22
***W
RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1736
*** Semiconductors SCT
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V, FM4F
*** Stop Electro
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
***nell
RF FET, 110V, 450MHZ-10MHZ, TO-272WB; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 450MHz; Operating Frequency Max: 10MHz; RF Transistor Case: TO-270WB; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6V2150N Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes
***escale Semiconductor
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
***et
Power LDMOS Transistor N-Channel 110V 5-Pin TO-270 WB EP T/R
***ical
Trans RF MOSFET N-CH 110V 5-Pin TO-270 W T/R
***or
RF ULTRA HIGH FREQUENCY BAND, N-
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:4-TO-270 ;RoHS Compliant: Yes
***W
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
***nell
TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
***et
Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-272 T/R
*** Electronic Components
RF MOSFET Transistors VHV6 10W TO272-2N
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 100V, 4.3A, TO-252AA
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
MRF6Vx Lateral N-Ch Broadband RF Power MOSFETs
NXP's MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More
Teil # Mfg. Beschreibung Aktie Preis
MRF6V2150NR1
DISTI # MRF6V2150NR1CT-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		884In Stock
  • 100:$52.5772
  • 10:$58.6290
  • 1:$62.4100
MRF6V2150NR1
DISTI # MRF6V2150NR1DKR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		884In Stock
  • 100:$52.5772
  • 10:$58.6290
  • 1:$62.4100
MRF6V2150NR1
DISTI # MRF6V2150NR1TR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		500In Stock
  • 500:$48.8424
MRF6V2150NR1
DISTI # MRF6V2150NR1		Avnet, Inc.Trans MOSFET N-CH 110V 5-Pin TO-270 WB EP T/R - Tape and Reel (Alt: MRF6V2150NR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$53.4900
  • 1000:$51.3900
  • 2000:$49.3900
  • 3000:$47.5900
  • 5000:$46.6900
MRF6V2150NR1
DISTI # 47M2188		NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, TO-270, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:2.5mA,Power Dissipation Pd:150W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes0
  • 1:$73.4500
MRF6V2150NR1
DISTI # 61AC0770		NXP SemiconductorsRF FET, 110V, 450MHZ-10MHZ, TO-272WB,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:450MHz,Operating Frequency Max:10MHz,RF Transistor Case:TO-270WB,No. of RoHS Compliant: Yes386
  • 1:$60.5200
  • 10:$57.5000
  • 25:$55.0900
  • 50:$53.0700
  • 100:$51.0500
  • 250:$48.8500
MRF6V2150NR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
RoHS: Compliant		1
  • 1000:$48.3200
  • 500:$50.8600
  • 100:$52.9500
  • 25:$55.2200
  • 1:$59.4700
MRF6V2150NR1
DISTI # 841-MRF6V2150NR1		NXP SemiconductorsRF MOSFET Transistors VHV6 150W
RoHS: Compliant		102
  • 1:$60.5200
  • 5:$58.7600
  • 10:$57.5000
  • 25:$55.0900
  • 100:$51.0500
  • 250:$48.8500
  • 500:$47.3800
MRF6V2150NR1
DISTI # MRF6V2150NR1		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 1:$61.4000
  • 10:$56.7500
  • 25:$55.0900
MRF6V2150NR1
DISTI # 2890604		NXP SemiconductorsRF FET, 110V, 450MHZ-10MHZ, TO-272WB
RoHS: Compliant		386
  • 1:$99.4800
  • 10:$93.4500
  • 100:$83.8100
MRF6V2150NR1
DISTI # 2890604		NXP SemiconductorsRF FET, 110V, 450MHZ-10MHZ, TO-272WB
RoHS: Compliant		386
  • 1:£45.7800
  • 5:£44.4600
  • 10:£41.6800
  • 50:£36.9500
Bild Teil # Beschreibung
EFR32BG13P732F512GM48-C

Mfr.#: EFR32BG13P732F512GM48-C

OMO.#: OMO-EFR32BG13P732F512GM48-C

 RF System on a Chip - SoC Blue Gecko QFN48 2.4 G 19 dB BLE/Proprietary 512 kB 64 kB(RAM) 31GPIO
TLV522DGKT

Mfr.#: TLV522DGKT

OMO.#: OMO-TLV522DGKT

 Operational Amplifiers - Op Amps DUAL ULTRA LOW POWER OPAMP
FDWS9510L-F085

Mfr.#: FDWS9510L-F085

OMO.#: OMO-FDWS9510L-F085

 MOSFET PT8P 40V LL PQFN56
SCS304AHGC9

Mfr.#: SCS304AHGC9

OMO.#: OMO-SCS304AHGC9

 Schottky Diodes & Rectifiers 650V;4A;34W SiC SBD TO-220ACP
CGA6P3X7R1E226M250AB

Mfr.#: CGA6P3X7R1E226M250AB

OMO.#: OMO-CGA6P3X7R1E226M250AB

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 25V 22uF 20% AEC-Q200
TAS3251DKQ

Mfr.#: TAS3251DKQ

OMO.#: OMO-TAS3251DKQ

 Audio Amplifiers DIGITAL INPUT AKITA
TLV522DGKT

Mfr.#: TLV522DGKT

OMO.#: OMO-TLV522DGKT-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps TLV522 500 nA Nanopower, Dual, RRIO, CMOS Input, Cost Optimized Operational Amplifier 8-VSSOP -40 to 125
SCS304AHGC9

Mfr.#: SCS304AHGC9

OMO.#: OMO-SCS304AHGC9-ROHM-SEMI

 SHORTER RECOVERY TIME, ENABLING
EFR32BG13P732F512GM48-C

Mfr.#: EFR32BG13P732F512GM48-C

OMO.#: OMO-EFR32BG13P732F512GM48-C-SILICON-LABS

 IC RF TXRX+MCU 802.15.4 48VFQFN
CRCW06031R00FKEAC

Mfr.#: CRCW06031R00FKEAC

OMO.#: OMO-CRCW06031R00FKEAC-VISHAY-DALE

 D11/CRCW0603-C 100 1R0 1% ET1
Verfügbarkeit
Aktie:
437
Auf Bestellung:
2420
Menge eingeben:
Der aktuelle Preis von MRF6V2150NR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
60,52 $
60,52 $
5
58,76 $
293,80 $
10
57,50 $
575,00 $
25
55,09 $
1 377,25 $
100
51,05 $
5 105,00 $
250
48,85 $
12 212,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
  • PCF85263 CMOS Real-Time Clock
    PCF85263 CMOS Real-Time Clock
    NXP's tiny real-time clock/calendar is optimized for low power consumption and with automatic switching to battery on main power loss.
  • NFC Contactless Readers
    NFC Contactless Readers
    NXP's NFC frontend with an advanced 32-bit microcontroller
  • Smart Charging Solutions
    Smart Charging Solutions
    NXP's smart charging solution consists of a primary side flyback QR controller, a secondary side SR controller, and a protocol controller.
  • Compare MRF6V2150NR1
    Compare MRF6V2150NR1
    MRF6V2150NB vs MRF6V2150NBR vs MRF6V2150NBR1
  • FRDM-KL26Z
    FRDM-KL26Z
    FRDM-KL26Z is an ultra-low-cost development platform for Kinetis L series KL16 and KL26 MCUs built on ARM® Cortex™-M0+ processors.
  • Single-Coil Wireless Reference Design
    Single-Coil Wireless Reference Design
    Design is based on the WPC-A11 transmitter definition, comprising of a 5 VDC input source, full-bridge inverter topology and frequency-control methodology
More Newest Products
Top