PHE13009/DG,127

PHE13009/DG,127
Mfr. #:
PHE13009/DG,127
Hersteller:
WeEn Semiconductors
Beschreibung:
Bipolar Transistors - BJT NPN POWER TRANSISTOR
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PHE13009/DG,127 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PHE13009/DG,127 DatasheetPHE13009/DG,127 Datasheet (P4-P6)PHE13009/DG,127 Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Produktkategorie
Transistoren (BJT) - Single
RoHS
Einzelheiten
Paket / Koffer
TO-220-3
Transistor Polarität
NPN
Aufbau
Single
Kollektor- Emitterspannung VCEO Max
400 V
Kollektor- Basisspannung VCBO
700 V
Maximaler DC-Kollektorstrom
12 A
Maximale Betriebstemperatur
+ 150 C
Marke
NXP Semiconductors
Kontinuierlicher Kollektorstrom
12 A
DC-Kollektor/Basisverstärkung hfe Min
8
DC-Stromverstärkung hFE Max
8
Minimale Betriebstemperatur
- 65 C
Verpackung
Rohr
Pd - Verlustleistung
80 W
Gewichtseinheit
0.211644 oz
Tags
PHE13009, PHE1, PHE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
TRANS NPN 400V 12A TO220AB
***ark
Transistor, Npn, 12A, 700V, To220ab
***ment14 APAC
TRANSISTOR, NPN, 12A, 400V, TO220AB; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:80W; DC Collector Current:12A; DC Current Gain hFE:40hFE; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
TRANSISTOR, NPN, 12A, 400V, TO220AB; Polarità Transistor:NPN; Tensione Collettore-Emettitore V(br)ceo:400V; Frequenza di Transizione ft:-; Dissipazione di Potenza Pd:80W; Corrente di Collettore CC:12A; Guadagno di Corrente CC hFE:40hFE; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Teil # Mfg. Beschreibung Aktie Preis
PHE13009/DG,127
DISTI # 1740-1200-ND
WeEn Semiconductor Co LtdTRANS NPN 400V 12A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
1In Stock
  • 5000:$0.3074
  • 3000:$0.3302
  • 1000:$0.3643
  • 100:$0.5761
  • 25:$0.7060
  • 10:$0.7510
  • 1:$0.8500
PHE13009/DG,127
DISTI # PHE13009/DG,127
Avnet, Inc.Trans GP BJT NPN 400V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: PHE13009/DG,127)
RoHS: Compliant
Min Qty: 5000
Container: Tube
Americas - 0
  • 50000:$0.2489
  • 25000:$0.2549
  • 15000:$0.2619
  • 10000:$0.2679
  • 5000:$0.2719
PHE13009/DG,127
DISTI # PHE13009/DG127
Avnet, Inc.Trans GP BJT NPN 400V 12A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: PHE13009/DG127)
Min Qty: 1087
Container: Bulk
Americas - 0
  • 10870:$0.2919
  • 5435:$0.2979
  • 3261:$0.3089
  • 2174:$0.3219
  • 1087:$0.3349
PHE13009,127
DISTI # 771-PHE13009127
WeEn Semiconductor Co LtdBipolar Transistors - BJT RAIL PWR-MOS
RoHS: Compliant
1440
  • 1:$0.7600
  • 10:$0.6070
  • 100:$0.3910
  • 1000:$0.3130
  • 2000:$0.2640
  • 10000:$0.2550
  • 25000:$0.2450
PHE13009/DG,127
DISTI # 771-PHE13009/DG,127
WeEn Semiconductor Co LtdBipolar Transistors - BJT NPN POWER TRANSISTOR
RoHS: Compliant
1742
  • 1:$0.8100
  • 10:$0.6420
  • 100:$0.4140
  • 1000:$0.3320
  • 2000:$0.2800
  • 10000:$0.2700
  • 25000:$0.2590
PHE13009/DG127NXP SemiconductorsNow WeEn - PHE13009 - Power Bipolar Transistor - TO-220AB
RoHS: Not Compliant
21982
  • 1000:$0.3000
  • 500:$0.3200
  • 100:$0.3300
  • 25:$0.3500
  • 1:$0.3700
PHE13009/DG,127
DISTI # 2075012
WeEn Semiconductor Co LtdTRANSISTOR, NPN, 12A, 400V, TO220AB
RoHS: Compliant
4900
  • 500:£0.2930
  • 250:£0.3320
  • 100:£0.3710
  • 25:£0.4910
  • 5:£0.5430
Bild Teil # Beschreibung
PHE13003C,126

Mfr.#: PHE13003C,126

OMO.#: OMO-PHE13003C-126

Bipolar Transistors - BJT Single NPN 1.5A 2.1W
PHE13003A,126

Mfr.#: PHE13003A,126

OMO.#: OMO-PHE13003A-126

Bipolar Transistors - BJT Single NPN 1A 2.1W
PHE13005X/01,127

Mfr.#: PHE13005X/01,127

OMO.#: OMO-PHE13005X-01-127

Bipolar Transistors - BJT Silicon diffused pwr transistor
PHE13003A126

Mfr.#: PHE13003A126

OMO.#: OMO-PHE13003A126-1190

Now WeEn - PHE13003A - Power Bipolar Transistor - TO-92
PHE13003AU

Mfr.#: PHE13003AU

OMO.#: OMO-PHE13003AU-1190

Neu und Original
PHE13003C+126

Mfr.#: PHE13003C+126

OMO.#: OMO-PHE13003C-126-1190

Now WeEn - PHE13003C - Power Bipolar Transistor - TO-92
PHE13005

Mfr.#: PHE13005

OMO.#: OMO-PHE13005-1190

Bipolar Transistors - BJT RAIL BIPOLAR
PHE13005,13005

Mfr.#: PHE13005,13005

OMO.#: OMO-PHE13005-13005-1190

Neu und Original
PHE13005X/01

Mfr.#: PHE13005X/01

OMO.#: OMO-PHE13005X-01-1190

Neu und Original
PHE13005X127

Mfr.#: PHE13005X127

OMO.#: OMO-PHE13005X127-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von PHE13009/DG,127 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,37 $
0,37 $
10
0,35 $
3,55 $
100
0,34 $
33,60 $
500
0,32 $
158,65 $
1000
0,30 $
298,70 $
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