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LMG3410R070RWHR

LMG3410R070RWHR
Mfr. #:
LMG3410R070RWHR
Beschreibung:
Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
LMG3410R070RWHR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
LMG3410R070RWHR Mehr Informationen LMG3410R070RWHR Product Details
Produkteigenschaft
Attributwert
Hersteller:
Texas Instruments
Produktkategorie:
Gate-Treiber
RoHS:
Y
Produkt:
MOSFET-Gate-Treiber
Typ:
Nicht invertiert
Montageart:
SMD/SMT
Paket / Koffer:
VQFN-32
Anzahl der Fahrer:
1 Driver
Anzahl der Ausgänge:
1 Output
Ausgangsstrom:
40 A
Aufbau:
Single
Anstiegszeit:
15 ns
Abfallzeit:
4.2 ns
Versorgungsspannung - Min.:
9.5 V
Versorgungsspannung - Max.:
18 V
Ausbreitungsverzögerung - Max:
20 ns, 36 ns
Betriebsversorgungsstrom:
43 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 125 C
Serie:
LMG3410R070
Verpackung:
Spule
Betriebstemperaturbereich:
- 40 C to + 125 C
Technologie:
Si
Marke:
Texas Instruments
Logiktyp:
CMOS
Maximale Ausschaltverzögerungszeit:
10 ns
Maximale Einschaltverzögerungszeit:
12 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
Gate-Treiber
Rds On - Drain-Source-Widerstand:
70 mOhms
Werkspackungsmenge:
2000
Unterkategorie:
PMIC - Power-Management-ICs
Tags
LMG3410, LMG341, LMG34, LMG3, LMG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E***n
    E***n
    RU

    Ok

    2019-08-26
    E***n
    E***n
    RU

    The order did not arrive. The money hasn't been returned yet. The seller rests with his hands and feet, supposedly here comes. But on order for a month there were no bodybuilding!

    2019-08-08
    C***c
    C***c
    LK

    deliverd but still not tested

    2019-07-06
***AS INSTRUMENTS INC
The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
***ASIN
The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.
LMG3410R070 600V 70mΩ GaN Power Stage
OMO Electronic LMG3410R070 600V 70mΩ GaN Power Stage with integrated driver and protection offers advantages over silicon MOSFETs. These include ultra-low input and output capacitance. Features include zero reverse recovery reducing switching losses by as much as 80% and low switch node ringing to decreasing EMI.
Gallium Nitride (GaN)
OMO Electronic Gallium Nitride (GaN) solutions deliver high-efficiency, power density, and reliability. The OMO Electronic GaN portfolio consists of controllers, drivers, and regulators that offer reduced power with end-to-end power conversion and 5MHz switching frequencies.
Teil # Beschreibung Aktie Preis
LMG3410R070RWHR
DISTI # 33098322		SMART 70MOHM GANFET WITHDRIVER2000
  • 2000:$19.3471
LMG3410R070RWHR
DISTI # LMG3410R070RWHR-ND		PWR MGMT MOSFET/PWR DRIVER
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$16.5766
LMG3410R070RWHR
DISTI # V39:1801_22606662		SMART 70MOHM GANFET WITHDRIVER0
    LMG3410R070RWHR
    DISTI # LMG3410R070RWHR    		MOSFET Driver 12A 1-OUT Hi/Lo Side Non-Inverse 32-Pin VQFN T/R - Tape and Reel (Alt: LMG3410R070RWHR)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel    		Americas - 0
    • 20000:$16.4900
    • 12000:$16.8900
    • 8000:$17.4900
    • 4000:$18.0900
    • 2000:$18.9900
    LMG3410R070RWHT
    DISTI # 595-LMG3410R070RWHT    		Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
    RoHS: Compliant    		1260
    • 1:$27.9400
    • 5:$26.7800
    • 10:$25.7700
    • 25:$24.6200
    • 100:$22.0100
    • 250:$21.0000
    LMG3410R070RWHR
    DISTI # 595-LMG3410R070RWHR    		Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
    RoHS: Compliant    		0
    • 2000:$15.7900
    Bild Teil # Beschreibung
    LMG3410R070RWHR

    Mfr.#: LMG3410R070RWHR

    OMO.#: OMO-LMG3410R070RWHR

    		 Gate Drivers SMART 70MOHM GAN FET WITH DRIVER
    LMG3410R070RWHR

    Mfr.#: LMG3410R070RWHR

    OMO.#: OMO-LMG3410R070RWHR-TEXAS-INSTRUMENTS

    		 PWR MGMT MOSFET/PWR DRIVER
    LMG3410R070RWHT

    Mfr.#: LMG3410R070RWHT

    OMO.#: OMO-LMG3410R070RWHT-TEXAS-INSTRUMENTS

    		 PWR MGMT MOSFET/PWR DRIVER
    LMG3410-HB-EVM

    Mfr.#: LMG3410-HB-EVM

    OMO.#: OMO-LMG3410-HB-EVM-1190

    		 - Boxed Product (Development Kits) (Alt: LMG3410-HB-EVM)
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von LMG3410R070RWHR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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