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BSC054N04NSGATMA1

BSC054N04NSGATMA1
Mfr. #:
BSC054N04NSGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC054N04NSGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
81 A
Rds On - Drain-Source-Widerstand:
4.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
34 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
57 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
34 S
Abfallzeit:
3.6 ns
Produktart:
MOSFET
Anstiegszeit:
2.6 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
16 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
BSC054N04NS BSC54N4NSGXT G SP000354808
Tags
BSC054N04NSGA, BSC054N04NSG, BSC054, BSC05, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 40 V 81 A 5.4 mO 26 nC SMT OptiMOS Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 40V 17A Automotive 8-Pin TDSON EP T/R
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:81A; On Resistance Rds(On):0.0045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 81A, 40V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:57W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:81A; Power Dissipation Pd:57W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
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*** Source Electronics
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MOSFET; N Ch.; 30V; 18A; 4.8 MOHM; 17 NC QG; SO-8; Pb-Free
***ark
MOSFET, N CH, 30V, 42A, POWER 56; Transistor Polarity:N Channel; Continuous Drai
*** Source Electronics
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R / MOSFET N-CH 30V 19A POWER56
***ure Electronics
N-Channel 30 V 4.9 mO Surface Mount PowerTrench Mosfet - Power 56
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Power Field-Effect Transistor, 19A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0312S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***or
N-CHANNEL POWER MOSFET
***el Electronic
Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
***ure Electronics
N-Channel 40 V 4.5 mOhm Surface Mount PwerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 40V 18.6A 8-Pin SOIC N T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 40V, 18.6A, 4.5mΩ
***rchild Semiconductor
The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
***emi
N-Channel PowerTrench® SyncFET™ 30V, 21A, 4.4mΩ
***r Electronics
Power Field-Effect Transistor, 19A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.
Teil # Mfg. Beschreibung Aktie Preis
BSC054N04NSGATMA1
DISTI # V72:2272_06384762		Infineon Technologies AGTrans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R
RoHS: Compliant		225
  • 75000:$0.2352
  • 30000:$0.2376
  • 15000:$0.2480
  • 6000:$0.2586
  • 3000:$0.2706
  • 1000:$0.3038
  • 500:$0.3665
  • 250:$0.3706
  • 100:$0.3747
  • 50:$0.5270
  • 25:$0.5338
  • 10:$0.5407
  • 1:$0.6256
BSC054N04NSGATMA1
DISTI # BSC054N04NSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 81A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		20996In Stock
  • 1000:$0.4169
  • 500:$0.5212
  • 100:$0.7036
  • 10:$0.9120
  • 1:$1.0400
BSC054N04NSGATMA1
DISTI # BSC054N04NSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 81A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		20996In Stock
  • 1000:$0.4169
  • 500:$0.5212
  • 100:$0.7036
  • 10:$0.9120
  • 1:$1.0400
BSC054N04NSGATMA1
DISTI # BSC054N04NSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 81A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		20000In Stock
  • 5000:$0.3416
BSC054N04NSGATMA1
DISTI # 30171878		Infineon Technologies AGTrans MOSFET N-CH 40V 17A 8-Pin TDSON EP T/R
RoHS: Compliant		225
  • 250:$0.3706
  • 100:$0.3747
  • 50:$0.5270
  • 25:$0.5338
BSC054N04NSGATMA1
DISTI # BSC054N04NSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 17A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC054N04NSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2649
  • 10000:$0.2549
  • 20000:$0.2459
  • 30000:$0.2379
  • 50000:$0.2329
BSC054N04NSGATMA1.
DISTI # 15AC2222		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:81A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:57W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3260
  • 10000:$0.3140
  • 20000:$0.3020
  • 30000:$0.2920
  • 50000:$0.2870
BSC054N04NS G
DISTI # 726-BSC054N04NSG		Infineon Technologies AGMOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
RoHS: Compliant		2613
  • 1:$0.8600
  • 10:$0.7130
  • 100:$0.4600
  • 1000:$0.3680
BSC054N04NSGATMA1
DISTI # 726-BSC054N04NSGATMA		Infineon Technologies AGMOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
RoHS: Compliant		3523
  • 1:$0.8200
  • 10:$0.6790
  • 100:$0.4380
  • 1000:$0.3510
BSC054N04NSGATMA1
DISTI # 1775448		Infineon Technologies AGMOSFET, N CH, 81A, 40V, PG-TDSON-8
RoHS: Compliant		0
  • 1:$1.3700
  • 10:$1.1300
  • 100:$0.7280
  • 1000:$0.5830
  • 5000:$0.4930
BSC054N04NSGATMA1
DISTI # C1S322000595932		Infineon Technologies AGMOSFETs
RoHS: Compliant		325
  • 100:$0.3876
  • 50:$0.5289
  • 25:$0.5425
  • 10:$0.5453
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OMO.#: OMO-LTST-C191KRKT

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Verfügbarkeit
Aktie:
16
Auf Bestellung:
1999
Menge eingeben:
Der aktuelle Preis von BSC054N04NSGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,82 $
0,82 $
10
0,68 $
6,81 $
100
0,44 $
44,00 $
1000
0,35 $
352,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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