OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SIA533EDJ-T1-GE3

SIA533EDJ-T1-GE3
Mfr. #:
SIA533EDJ-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -12V Vds 8V Vgs PowerPAK SC-70
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIA533EDJ-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA533EDJ-T1-GE3 DatasheetSIA533EDJ-T1-GE3 Datasheet (P4-P6)SIA533EDJ-T1-GE3 Datasheet (P7-P9)SIA533EDJ-T1-GE3 Datasheet (P10-P12)SIA533EDJ-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Mehr Informationen:
SIA533EDJ-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SC70-6
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
12 V
Id - Kontinuierlicher Drainstrom:
4.5 A
Rds On - Drain-Source-Widerstand:
34 mOhms, 59 mOhms
Vgs th - Gate-Source-Schwellenspannung:
400 mV
Vgs - Gate-Source-Spannung:
8 V
Qg - Gate-Ladung:
10 nC, 13 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
7.8 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Höhe:
0.75 mm
Länge:
2.05 mm
Serie:
SIA
Transistortyp:
1 N-Channel, 1 P-Channel
Breite:
2.05 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
21 S, 11 S
Abfallzeit:
10 ns, 10 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns, 15 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns, 25 ns
Typische Einschaltverzögerungszeit:
10 ns, 15 ns
Teil # Aliase:
SIA533EDJ-GE3
Gewichtseinheit:
0.000988 oz
Tags
SIA53, SIA5, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIA533EDJ-T1-GE3 Dual N/P-channel MOSFET Transistor; 4.5 A; 12 V; 6-Pin SC-70
***ure Electronics
SiA533EDJ Series Dual N & P Channel 12 V 34 mOhm 7.8 W Mosfet - PowerPAK SC-70-6
***et Europe
Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R
***C
Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70
***Components
Trans MOSFET N/P-CH 12V 4.5A
***i-Key
MOSFET N/P-CH 12V 4.5A SC70-6
***
N- AND P-CHANNEL 12-V (D-S)
***ark
Transistor Polarity:n And P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.028Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv; Power Dissipation Pd:7.8W Rohs Compliant: No
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Teil # Mfg. Beschreibung Aktie Preis
SIA533EDJ-T1-GE3
DISTI # V72:2272_09216848		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R2640
  • 1000:$0.2126
  • 500:$0.2515
  • 250:$0.3041
  • 100:$0.3051
  • 25:$0.3797
  • 10:$0.3814
  • 1:$0.4597
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		91879In Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		91879In Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		90000In Stock
  • 3000:$0.2302
SIA533EDJ-T1-GE3
DISTI # 30208455		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R2640
  • 1000:$0.2126
  • 500:$0.2515
  • 250:$0.3041
  • 100:$0.3051
  • 34:$0.3797
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA533EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.4679
  • 6000:€0.3189
  • 12000:€0.2749
  • 18000:€0.2539
  • 30000:€0.2359
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA533EDJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1959
  • 6000:$0.1899
  • 12000:$0.1819
  • 18000:$0.1769
  • 30000:$0.1729
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA533EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIA533EDJ-T1-GE3
    DISTI # 04X9740    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 12V, POWERPAK SC70-6,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes0
    • 1:$0.7600
    • 10:$0.6400
    • 25:$0.5860
    • 50:$0.5330
    • 100:$0.4790
    • 500:$0.3510
    • 1000:$0.2710
    SIA533EDJ-T1-GE3
    DISTI # 86R3786    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 12V, POWERPAK SC70-6, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V , RoHS Compliant: Yes0
    • 1:$0.2300
    • 3000:$0.2300
    SIA533EDJ-T1-GE3.
    DISTI # 15AC4247    		Vishay IntertechnologiesTransistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:7.8W , RoHS Compliant: No0
    • 1:$0.2300
    • 3000:$0.2300
    SIA533EDJ-T1-GE3
    DISTI # 70616551    		Vishay SiliconixSIA533EDJ-T1-GE3 Dual N/P-channel MOSFET Transistor,4.5 A,12 V,6-Pin SC-70
    RoHS: Compliant    		0
    • 300:$0.4300
    • 600:$0.3800
    • 1500:$0.3400
    • 3000:$0.3000
    SIA533EDJ-T1-GE3
    DISTI # 781-SIA533EDJ-T1-GE3    		Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs PowerPAK SC-70
    RoHS: Compliant    		9531
    • 1:$0.6400
    • 10:$0.4880
    • 100:$0.3620
    • 500:$0.2980
    • 1000:$0.2300
    • 3000:$0.2100
    • 6000:$0.1960
    • 9000:$0.1830
    SIA533EDJ-T1-GE3Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs PowerPAK SC-70
    RoHS: Compliant    		Americas - 3000
      SIA533EDJ-T1-GE3
      DISTI # C1S803601730507      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2640
      • 250:$0.3042
      • 100:$0.3051
      • 25:$0.3797
      • 10:$0.3814
      Bild Teil # Beschreibung
      AD4002BRMZ

      Mfr.#: AD4002BRMZ

      OMO.#: OMO-AD4002BRMZ

      		 Analog to Digital Converters - ADC 18-Bit, 2 MSPS
      AT25M02-SSHM-T

      Mfr.#: AT25M02-SSHM-T

      OMO.#: OMO-AT25M02-SSHM-T

      		 EEPROM 1.7-5.5V, 5MHz, Ind Tmp, 8-SOIC-N
      NRVTS2H60ESFT1G

      Mfr.#: NRVTS2H60ESFT1G

      OMO.#: OMO-NRVTS2H60ESFT1G

      		 Schottky Diodes & Rectifiers TRENCH SCHOTTKY REC TIFIER
      74AUP1G59L6X

      Mfr.#: 74AUP1G59L6X

      OMO.#: OMO-74AUP1G59L6X

      		 Logic Gates 600V N-Channel MOSFET
      ATTINY416-MNR

      Mfr.#: ATTINY416-MNR

      OMO.#: OMO-ATTINY416-MNR

      		 8-bit Microcontrollers - MCU 105C Green 20MHz QFN 20 T&R
      22201C106MAT2A

      Mfr.#: 22201C106MAT2A

      OMO.#: OMO-22201C106MAT2A

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 10uF X7R 2220 20% Tol HIGH CV
      ADN8831ACPZ-REEL7

      Mfr.#: ADN8831ACPZ-REEL7

      OMO.#: OMO-ADN8831ACPZ-REEL7

      		 Laser Drivers HIGH PRECISION/EFFICIENCY TEC CONTROLLER
      ADN8831ACPZ-REEL7

      Mfr.#: ADN8831ACPZ-REEL7

      OMO.#: OMO-ADN8831ACPZ-REEL7-ANALOG-DEVICES-INC-ADI

      		 Laser Drivers HIGH PRECISION/EFFICIENCY TEC CONTROLLER
      AD4002BRMZ

      Mfr.#: AD4002BRMZ

      OMO.#: OMO-AD4002BRMZ-ANALOG-DEVICES

      		 18-BIT, 2 MSPS PULSAR ADC
      CBMF1608T470K

      Mfr.#: CBMF1608T470K

      OMO.#: OMO-CBMF1608T470K-TAIYO-YUDEN

      		 Fixed Inductors INDCTR BTM-SRF WND 0603 47uH 10%
      Verfügbarkeit
      Aktie:
      26
      Auf Bestellung:
      2009
      Menge eingeben:
      Der aktuelle Preis von SIA533EDJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,63 $
      0,63 $
      10
      0,49 $
      4,87 $
      100
      0,36 $
      36,10 $
      500
      0,30 $
      148,50 $
      1000
      0,23 $
      229,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Neueste Produkte
      • -12 V and -20 V P-Channel Gen III MOSFETs
        -12 V and -20 V P-Channel Gen III MOSFETs
        Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
      • DG2788A Dual DPDT / Quad SPDT Analog Switch
        DG2788A Dual DPDT / Quad SPDT Analog Switch
        Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
      • Smart Load Switches
        Smart Load Switches
        Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
      • SUM70101EL 100 V P-Channel MOSFET
        SUM70101EL 100 V P-Channel MOSFET
        Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
      • Compare SIA533EDJ-T1-GE3
        Compare SIA533EDJ-T1-GE3
        SIA533EDJT1GE3 vs SIA533EDJT1GE3CUTTAPE vs SIA534DJE3
      • DGQ2788A AEC-Q100 Qualified Analog Switch
        DGQ2788A AEC-Q100 Qualified Analog Switch
        The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
      More Newest Products
      Top