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FDR836P

FDR836P
Mfr. #:
FDR836P
Hersteller:
Rochester Electronics, LLC
Beschreibung:
P-Channel 2.5V Specified MOSFET - Bulk (Alt: FDR836P)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDR836P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
FDR83, FDR8, FDR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
P-Channel 2.5V Specified MOSFET
***ser
Not available to order DISC BY MFG 2/02
***(Formerly Allied Electronics)
SI3460DDV-T1-GE3 N-channel MOSFET Transistor; 7.9 A; 20 V; 6-Pin TSOP
***itex
Transistor: N-MOSFET; unipolar; 20V; 7.9A; 0.028ohm; 2.7W; -55+150 deg.C; SMD; TSOP6
***ure Electronics
N-Channel 20 V 0.028 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6
***ark
Mosfet,n Ch,d-S,20V,7.9A,tsop6, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.9A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400Mv Rohs Compliant: No
***ment14 APAC
MOSFET,N CH,D-S,20V,7.9A,TSOP6; Transistor Polarity:N Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.2A; Power Dissipation Pd:1.7W; Voltage Vgs Max:8V
***emi
N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ
*** Source Electronics
Trans MOSFET N-CH 20V 6.2A 6-Pin TSOT-23 T/R / MOSFET N-CH 20V 6.2A SSOT-6
***ark
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:820mV; Power Dissipation:1.6W; No. of Pins:6Pins RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.
***Yang
Transistor MOSFET Array Dual N-CH 20V 7.5A 8-Pin SOIC T/R - Tape and Reel
***emi
Dual N-Channel PowerTrench™ MOSFET, 2.5V Specified, 20V, 7.5A, 18mΩ
***ure Electronics
Dual N-Channel 20 V 18 mOhm SMT PowerTrench Mosfet - SOIC-8
***rchild Semiconductor
These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
***ment14 APAC
MOSFET, DUAL, NN, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:7.5A; Current Id Max:7.5A; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; SMD Marking:FDS6890A; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:1.5V
***emi
N-Channel PowerTrench® MOSFET 20V, 7A, 26mΩ
***ure Electronics
N-Channel 20 V 7 A 14 mOhm Power Trench® Mosfet - MicorFET
***rchild Semiconductor
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on) @ VGS = 1.5 V on special MicroFET leadframe.
***nell
MOSFET, N CH, 20V, 7A, MFET1.6X1.6; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited
***et Europe
Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R
***ure Electronics
P-CH MOSFET TSOP-6 20V 27MOHM @ 4.5V
***ment14 APAC
MOSFET, P CH, -20V, -8A, TSOP-6
***ronik
P-CHANNEL-FET 7A 20V TSOP-6 RoHSconf
***nell
MOSFET, P CH, -20V, 0.0347OHM, -8A, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0347ohm; Rds(on) Test Voltage Vgs:-1.8V; Power Dissipation Pd:2.97W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:-
***ure Electronics
SI3493BDV Series 20 V 0.0275 O Surface Mount Power Mosfet - TSOP-6
***ical
Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R
***mal
P-Ch MOSFET TSOP-6 20V 27mohm @ 4.5V
***id Electronics
Small Signal Field-Effect Transistor 8A I(D)
***el Electronic
MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V
Teil # Mfg. Beschreibung Aktie Preis
FDR836P
DISTI # FDR836P		ON SemiconductorP-Channel 2.5V Specified MOSFET - Bulk (Alt: FDR836P)
RoHS: Not Compliant
Min Qty: 404
Container: Bulk		Americas - 0
  • 4040:$0.7649
  • 2020:$0.7839
  • 1212:$0.7939
  • 808:$0.8049
  • 404:$0.8099
FDR836P
DISTI # 512-FDR836P		ON SemiconductorMOSFET DISC BY MFG 2/02
RoHS: Not compliant		0
    FDR836PFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 6.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Not Compliant    		15000
    • 1000:$0.8200
    • 500:$0.8600
    • 100:$0.8900
    • 25:$0.9300
    • 1:$1.0000
    Bild Teil # Beschreibung
    FDR6580

    Mfr.#: FDR6580

    OMO.#: OMO-FDR6580

    		 MOSFET SSOT-8 N-CH 2.5V
    FDR840P

    Mfr.#: FDR840P

    OMO.#: OMO-FDR840P

    		 MOSFET SSOT-8 P-CH 2.5V
    FDR838P

    Mfr.#: FDR838P

    OMO.#: OMO-FDR838P

    		 MOSFET SSOT-8 P-CH -20V
    FDR-L60028SC

    Mfr.#: FDR-L60028SC

    OMO.#: OMO-FDR-L60028SC-1190

    		 Neu und Original
    FDR54E

    Mfr.#: FDR54E

    OMO.#: OMO-FDR54E-1190

    		 Neu und Original
    FDR54U

    Mfr.#: FDR54U

    OMO.#: OMO-FDR54U-1190

    		 Neu und Original
    FDR6674A-NL

    Mfr.#: FDR6674A-NL

    OMO.#: OMO-FDR6674A-NL-1190

    		 Neu und Original
    FDR6678AF40

    Mfr.#: FDR6678AF40

    OMO.#: OMO-FDR6678AF40-1190

    		 Neu und Original
    FDR840P-ND(FDS840P)

    Mfr.#: FDR840P-ND(FDS840P)

    OMO.#: OMO-FDR840P-ND-FDS840P--1190

    		 Neu und Original
    FDR5533-120-01

    Mfr.#: FDR5533-120-01

    OMO.#: OMO-FDR5533-120-01-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von FDR836P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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