SI2308DS-T1-E3

SI2308DS-T1-E3
Mfr. #:
SI2308DS-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2308DS-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2308DS-T1-E3 DatasheetSI2308DS-T1-E3 Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.45 mm
Länge:
2.9 mm
Serie:
SI2
Breite:
1.6 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI2308DS-E3
Gewichtseinheit:
0.000282 oz
Tags
SI2308DS-T1-E, SI2308DS-T, SI2308D, SI2308, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET;N-Ch;VDSS 60V;RDS(ON) 0.125Ohm;ID 2A;TO-236 (SOT-23);PD 1.25W;VGS +/-20V
***ure Electronics
SI2308DS Series 60 V 0.15 Ohm 10 nC N-Channel Surface Mount Mosfet - SOT-23
***nell
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:2A; Resistance, Rds On:0.16ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; SMD Marking:A8; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Min:1.5V; Width, External:3.05mm; Width, Tape:8mm
Teil # Mfg. Beschreibung Aktie Preis
SI2308DS-T1-E3
DISTI # SI2308DS-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 60V 2A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI2308DS-T1-E3
    DISTI # SI2308DS-T1-E3CT-ND
    Vishay SiliconixMOSFET N-CH 60V 2A SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI2308DS-T1-E3
      DISTI # SI2308DS-T1-E3DKR-ND
      Vishay SiliconixMOSFET N-CH 60V 2A SOT23-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI2308DS-T1-E3
        DISTI # 781-SI2308DS-E3
        Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
        RoHS: Compliant
        0
          SI2308DS-T1
          DISTI # 781-SI2308DS
          Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
          RoHS: Not compliant
          0
            SI2308DS-T1-E3
            DISTI # 1470158
            Vishay Intertechnologies 
            RoHS: Compliant
            0
            • 10:$0.9600
            SI2308DST1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
            RoHS: Compliant
            3865
              Bild Teil # Beschreibung
              SI2308DS-T1-E3

              Mfr.#: SI2308DS-T1-E3

              OMO.#: OMO-SI2308DS-T1-E3

              MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
              SI2308DS

              Mfr.#: SI2308DS

              OMO.#: OMO-SI2308DS-1190

              Neu und Original
              SI2308DS-T1

              Mfr.#: SI2308DS-T1

              OMO.#: OMO-SI2308DS-T1-1190

              MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
              SI2308DS-T1-E3

              Mfr.#: SI2308DS-T1-E3

              OMO.#: OMO-SI2308DS-T1-E3-VISHAY

              MOSFET N-CH 60V 2A SOT23-3
              SI2308DS-T1-E3/B02

              Mfr.#: SI2308DS-T1-E3/B02

              OMO.#: OMO-SI2308DS-T1-E3-B02-1190

              Neu und Original
              SI2308DS-T1-ES , MAX6425

              Mfr.#: SI2308DS-T1-ES , MAX6425

              OMO.#: OMO-SI2308DS-T1-ES-MAX6425-1190

              Neu und Original
              SI2308DS-T1-GE3

              Mfr.#: SI2308DS-T1-GE3

              OMO.#: OMO-SI2308DS-T1-GE3-1190

              N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3
              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              1000
              Menge eingeben:
              Der aktuelle Preis von SI2308DS-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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