CSD15571Q2

CSD15571Q2
Mfr. #:
CSD15571Q2
Beschreibung:
MOSFET 20V N-Channel NexFET Pwr MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD15571Q2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CSD15571Q2 Mehr Informationen CSD15571Q2 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Texas Instruments
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
WSON-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
22 A
Rds On - Drain-Source-Widerstand:
15 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
5.1 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
NexFET
Verpackung:
Spule
Höhe:
0.75 mm
Länge:
2 mm
Serie:
CSD15571Q2
Transistortyp:
1 N-Channel
Breite:
2 mm
Marke:
Texas Instruments
Vorwärtstranskonduktanz - Min:
25 S
Abfallzeit:
4.1 ns
Produktart:
MOSFET
Anstiegszeit:
17.2 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
9.9 ns
Typische Einschaltverzögerungszeit:
4.7 ns
Gewichtseinheit:
0.000198 oz
Tags
CSD15, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
20-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 19.2 mOhm 6-WSON -55 to 150
***ical
Trans MOSFET N-CH 20V 22A 6-Pin WSON EP T/R
***
The NexFET power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2x2 offers excellent thermal performance for the size of the package.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Teil # Beschreibung Aktie Preis
CSD15571Q2
DISTI # 296-39992-1-ND
MOSFET N-CH 20V 22A 6-SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
10420In Stock
  • 1000:$0.1907
  • 500:$0.2468
  • 100:$0.3365
  • 10:$0.4490
  • 1:$0.5300
CSD15571Q2
DISTI # 296-39992-6-ND
MOSFET N-CH 20V 22A 6-SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
10420In Stock
  • 1000:$0.1907
  • 500:$0.2468
  • 100:$0.3365
  • 10:$0.4490
  • 1:$0.5300
CSD15571Q2
DISTI # 296-39992-2-ND
MOSFET N-CH 20V 22A 6-SON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 15000:$0.1470
  • 6000:$0.1579
  • 3000:$0.1688
CSD15571Q2
DISTI # CSD15571Q2
Trans MOSFET N-CH 20V 22A 6-Pin SON T/R - Tape and Reel (Alt: CSD15571Q2)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.1429
  • 6000:$0.1359
  • 12000:$0.1319
  • 18000:$0.1269
  • 30000:$0.1239
CSD15571Q220-V N-Channel NexFET&#153,Power MOSFET5455
  • 1000:$0.1100
  • 750:$0.1300
  • 500:$0.1700
  • 250:$0.2200
  • 100:$0.2400
  • 25:$0.2800
  • 10:$0.3100
  • 1:$0.3500
CSD15571Q2
DISTI # 595-CSD15571Q2
MOSFET 20V N-Channel NexFET Pwr MOSFET
RoHS: Compliant
15460
  • 1:$0.4300
  • 10:$0.3600
  • 100:$0.2180
  • 1000:$0.1690
  • 3000:$0.1440
  • 9000:$0.1340
  • 24000:$0.1270
Bild Teil # Beschreibung
TPL0202-10MRTER

Mfr.#: TPL0202-10MRTER

OMO.#: OMO-TPL0202-10MRTER

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INA333AIDRGR

Mfr.#: INA333AIDRGR

OMO.#: OMO-INA333AIDRGR

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Mfr.#: LM3550SP/NOPB

OMO.#: OMO-LM3550SP-NOPB

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BQ24040DSQT

Mfr.#: BQ24040DSQT

OMO.#: OMO-BQ24040DSQT

Battery Management 800mA Sng-Inpt Sg Cl Li-Ion Batt Charger
TPS259250DRCT

Mfr.#: TPS259250DRCT

OMO.#: OMO-TPS259250DRCT

Hot Swap Voltage Controllers 5V, 5A, 30mA eFuse
DS90LV028AQMA/NOPB

Mfr.#: DS90LV028AQMA/NOPB

OMO.#: OMO-DS90LV028AQMA-NOPB

LVDS Interface IC Auto LVDS Dual Diff Line Receiver
CSD25310Q2

Mfr.#: CSD25310Q2

OMO.#: OMO-CSD25310Q2

MOSFET 20-V P-CH NexFET Pwr MOSFET
RC0603FR-071K15L

Mfr.#: RC0603FR-071K15L

OMO.#: OMO-RC0603FR-071K15L

Thick Film Resistors - SMD 1.15K OHM 1%
TPS7A8801RTJR

Mfr.#: TPS7A8801RTJR

OMO.#: OMO-TPS7A8801RTJR

LDO Voltage Regulators Dual 1A LDO
LMV344IPWR

Mfr.#: LMV344IPWR

OMO.#: OMO-LMV344IPWR

Operational Amplifiers - Op Amps Quad Rail-To-Rail Output CMOS
Verfügbarkeit
Aktie:
14
Auf Bestellung:
1997
Menge eingeben:
Der aktuelle Preis von CSD15571Q2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,43 $
0,43 $
10
0,36 $
3,60 $
100
0,22 $
21,80 $
1000
0,17 $
169,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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