SISS64DN-T1-GE3

Mfr. #:: SISS64DN-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SISS64DN-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SISS64DN-T1-GE3 Datasheet SISS64DN-T1-GE3 Datasheet (P4-P6)SISS64DN-T1-GE3 Datasheet (P7)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PowerPAK-1212-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 40 A

Rds On - Drain-Source-Widerstand:: 1.8 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.1 V

Vgs - Gate-Source-Spannung:: 20 V, - 16 V

Qg - Gate-Ladung:: 68 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 57 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET, PowerPAK

Verpackung:: Spule

Serie:: SIS

Transistortyp:: 1 N-Channel

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 70 S

Abfallzeit:: 10 ns

Produktart:: MOSFET

Anstiegszeit:: 15 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 25 ns

Typische Einschaltverzögerungszeit:: 13 ns

Tags: SISS6, SISS, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISS64DN-T1-GE3 Beschreibung

***et Europe: TrenchFET Gen IV Power MOSFET N-Channel Single 30V VDS +20V -16V VGS 40A ID 8-Pin PowerPAK 1212 T/R

***ical: Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK 1212-S T/R

***i-Key: MOSFET N-CHANNEL 30V 40A 1212-8S

***ark: Mosfet, N-Ch, 30V, 40A, 150Deg C, 57W; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 40A, 150DEG C, 57W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:57W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANAL N, 30V, 40A, 150°C, 57W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:40A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0018ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.2V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:PowerPAK 1212; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SISS64DN-T1-GE3 DISTI # V72:2272_21388895	Vishay Intertechnologies	SISS64DN-T1-GE3	5972	75000:$0.5084 30000:$0.5094 15000:$0.5106 6000:$0.5117 3000:$0.5128 1000:$0.6029 500:$0.7094 250:$0.8491 100:$0.8581 50:$0.9082 25:$1.0092 10:$1.1213 1:$1.3363
SISS64DN-T1-GE3 DISTI # V99:2348_21388895	Vishay Intertechnologies	SISS64DN-T1-GE3	0	6000:$0.5838
SISS64DN-T1-GE3 DISTI # SISS64DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CHANNEL 30V 40A 1212-8S Min Qty: 1 Container: Cut Tape (CT)	11784In Stock	1000:$0.6154 500:$0.7795 100:$0.9436 10:$1.2100 1:$1.3500
SISS64DN-T1-GE3 DISTI # SISS64DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CHANNEL 30V 40A 1212-8S Min Qty: 1 Container: Digi-Reel®	11784In Stock	1000:$0.6154 500:$0.7795 100:$0.9436 10:$1.2100 1:$1.3500
SISS64DN-T1-GE3 DISTI # SISS64DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CHANNEL 30V 40A 1212-8S Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	6000:$0.5297 3000:$0.5576
SISS64DN-T1-GE3 DISTI # 32410161	Vishay Intertechnologies	SISS64DN-T1-GE3	5972	15000:$0.5106 6000:$0.5117 3000:$0.5128 1000:$0.6029 500:$0.7094 250:$0.8491 100:$0.8581 50:$0.9082 25:$1.0092 12:$1.1213
SISS64DN-T1-GE3 DISTI # SISS64DN-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 30V VDS +20V -16V VGS 40A ID8-Pin PowerPAK 1212 T/R (Alt: SISS64DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0
SISS64DN-T1-GE3 DISTI # SISS64DN-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 30V VDS +20V -16V VGS 40A ID8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISS64DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.5106 30000:$0.5248 18000:$0.5397 12000:$0.5626 6000:$0.5798
SISS64DN-T1-GE3 DISTI # 59AC7457	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET RoHS: Not Compliant	0	10000:$0.5060 6000:$0.5180 4000:$0.5380 2000:$0.5980 1000:$0.6580 1:$0.6850
SISS64DN-T1-GE3 DISTI # 81AC2797	Vishay Intertechnologies	MOSFET, N-CH, 30V, 40A, 150DEG C, 57W,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes RoHS: Compliant	6050	2500:$0.5250 1000:$0.5710 500:$0.6620 100:$0.7570 50:$0.8560 25:$0.9440 10:$1.0300 1:$1.3400
SISS64DN-T1-GE3 DISTI # 78-SISS64DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S RoHS: Compliant	3440	1:$1.3500 10:$1.1300 100:$0.8980 500:$0.7570 1000:$0.6040 3000:$0.5570 6000:$0.5290
SISS64DN-T1-GE3 DISTI # 2932962	Vishay Intertechnologies	MOSFET, N-CH, 30V, 40A, 150DEG C, 57W RoHS: Compliant	6050	3000:$0.8390 1000:$0.8560 500:$1.0900 100:$1.2700 10:$1.6400 1:$1.9900
SISS64DN-T1-GE3 DISTI # 2932962RL	Vishay Intertechnologies	MOSFET, N-CH, 30V, 40A, 150DEG C, 57W RoHS: Compliant	0	5000:£0.4450 1000:£0.4630 500:£0.5870 250:£0.6360 100:£0.6830 10:£0.9410 1:£1.2300
SISS64DN-T1-GE3 DISTI # 2932962	Vishay Intertechnologies	MOSFET, N-CH, 30V, 40A, 150DEG C, 57W RoHS: Compliant	6050	5000:£0.4450 1000:£0.4630 500:£0.5870 250:£0.6360 100:£0.6830 10:£0.9410 1:£1.2300

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1986
Menge eingeben:

Der aktuelle Preis von SISS64DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,39 $~~; ~~1,39 $~~

10: ~~1,14 $~~; ~~11,40 $~~

100: ~~0,88 $~~; ~~88,10 $~~

500: ~~0,76 $~~; ~~378,50 $~~

1000: ~~0,60 $~~; ~~598,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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SISS64DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes