SI1050X-T1-E3

SI1050X-T1-E3
Mfr. #:
SI1050X-T1-E3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 8V 1.34A SOT563F
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI1050X-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SI1050, SI105, SI10, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 8V 1.34A SOT563F
***ark
MOSFET, N, SC-89; Transistor type:MOSFET; Voltage, Vds typ:8V; Current, Id cont:1.3A; Resistance, Rds on:0.086R; Voltage, Vgs Rds on measurement:4.5V; Voltage, Vgs th typ:0.9V; Case style:SC-89-6; Base number:1050; Charge, gate RoHS Compliant: Yes
***nell
MOSFET, N, SC-89; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:8V; Current, Id Cont:1.3A; Resistance, Rds On:0.086ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.9V; Case Style:SC-89; Termination Type:SMD; Base Number:1050; Current, Idm Pulse:6A; N-channel Gate Charge:7.1nC; No. of Pins:6; Power Dissipation:0.236mW; Power, Pd:0.236W; Resistance, Rds on @ Vgs = 1.8V:0.102ohm; Resistance, Rds on @ Vgs = 2.5V:0.093ohm; Resistance, Rds on @ Vgs = 4.5V:0.086ohm; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:8V; Voltage, Vgs th Max:0.9V; Voltage, Vgs th Min:0.35V
Teil # Mfg. Beschreibung Aktie Preis
SI1050X-T1-E3
DISTI # SI1050X-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 8V 1.34A SOT563F
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI1050X-T1-E3
    DISTI # SI1050X-T1-E3CT-ND
    Vishay SiliconixMOSFET N-CH 8V 1.34A SOT563F
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI1050X-T1-E3
      DISTI # SI1050X-T1-E3DKR-ND
      Vishay SiliconixMOSFET N-CH 8V 1.34A SOT563F
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        Bild Teil # Beschreibung
        SI1050X-T1-GE3

        Mfr.#: SI1050X-T1-GE3

        OMO.#: OMO-SI1050X-T1-GE3

        MOSFET 8V Vds 5V Vgs SC89-6
        SI1050X-T1-E3

        Mfr.#: SI1050X-T1-E3

        OMO.#: OMO-SI1050X-T1-E3

        MOSFET RECOMMENDED ALT 781-SI1050X-GE3
        SI1050G

        Mfr.#: SI1050G

        OMO.#: OMO-SI1050G-1190

        Neu und Original
        SI1050GS

        Mfr.#: SI1050GS

        OMO.#: OMO-SI1050GS-1190

        Neu und Original
        SI1050VISHAY

        Mfr.#: SI1050VISHAY

        OMO.#: OMO-SI1050VISHAY-1190

        Neu und Original
        SI1050X-T1-GE3

        Mfr.#: SI1050X-T1-GE3

        OMO.#: OMO-SI1050X-T1-GE3-VISHAY

        MOSFET N-CH 8V 1.34A SC-89-6
        SI1050X-T1-E3

        Mfr.#: SI1050X-T1-E3

        OMO.#: OMO-SI1050X-T1-E3-VISHAY

        MOSFET N-CH 8V 1.34A SOT563F
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1000
        Menge eingeben:
        Der aktuelle Preis von SI1050X-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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