NDF08N50ZG

Mfr. #:: NDF08N50ZG
Hersteller:: ON Semiconductor
Beschreibung:: IGBT Transistors MOSFET NFET T0220FP 600V 7.5A 85
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: NDF08N50ZG Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NDF08N50ZG Datasheet NDF08N50ZG Datasheet (P4-P6)
ECAD Model:

Produkteigenschaft
Attributwert

Tags: NDF08N5, NDF08, NDF0, NDF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NDF08N50ZG Beschreibung

***(Formerly Allied Electronics): NDF08N50ZG N-channel MOSFET Transistor; 7.5 A; 500 V; 3-Pin TO-220FP

***emi: Power MOSFET 500V 7.5A 0.850 Ohm Single N-Channel TO-220FP

***Yang: Trans MOSFET N-CH 500V 8.5A 3-Pin(3+Tab) TO-220FP Rail - Rail/Tube

***ponent Stockers USA: 7.5 A 500 V 0.85 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***r Electronics: Power Field-Effect Transistor, 7.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):690mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:31W

***emi: Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 9 A, 800 mΩ, TO-220F

***ure Electronics: Single N-Channel 500 V 44 W 35 nC DMOS Through Hole Mosfet - TO-220F-3

***Yang: Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***nell: MOSFET, N-CH, 500V, 9A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.7ohm; R; Available until stocks are exhausted Alternative available

***r Electronics: Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, UniFETTM, FRFET®, 500V, 9A, 850mΩ, TO-220F

***ical: Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220FP Rail

***r Electronics: Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220F

***ical: Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220FP Rail

***r Electronics: Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

***nell: MOSFET, N, TO-220F; Transistor Polarity:N; Max Current Id:5.3A; Max Voltage Vds:500V; On State Resistance:0.73ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:30V; Power Dissipation:50W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:TO-220F; No. of Pins:3; SVHC 2:Cobalt dichloride; Case Style:TO-220F; Cont Current Id:5.3A; Power Dissipation Pd:50W; Pulse Current Idm:21A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:500V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)

***va Crawler: N-channel 500 V, 0.72 Ohm typ., 7.2 A SuperMESH Power MOSFET in TO-220FP package

***ical: Trans MOSFET N-CH 500V 7.2A 3-Pin(3+Tab) TO-220FP Tube

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: TO-220FP Polarity: N Power dissipation: 30 W

***ure Electronics: N-Channel 500 V 0.85 Ohm Zener-Protected SuperMESH MOSFET

***ark: MOSFET, N CHANNEL, 500V, 7.2A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:7.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ical: Trans MOSFET N-CH 500V 8.7A 3-Pin(3+Tab) TO-220AB

***nell: MOSFET, N-CH, 500V, 8.7A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po

***roFlash: Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***i-Key: MOSFET N-CH 400V 6A TO-220F

***ser: MOSFETs 400V N-Ch Q-FET advance C-Series

***el Nordic: Contact for details

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
NDF08N50ZG DISTI # V36:1790_17753362	ON Semiconductor	Trans MOSFET N-CH 500V 8.5A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	678	1:$0.1837
NDF08N50ZG DISTI # NDF08N50ZGOS-ND	ON Semiconductor	MOSFET N-CH 500V 8.5A TO-220FP RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
NDF08N50ZG DISTI # 25979165	ON Semiconductor	Trans MOSFET N-CH 500V 8.5A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	678	100:$0.9009 25:$0.9911 15:$1.1344
NDF08N50ZG DISTI # 30584033	ON Semiconductor	Trans MOSFET N-CH 500V 8.5A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	120	59:$0.4360
NDF08N50ZG DISTI # NDF08N50ZG	ON Semiconductor	Trans MOSFET N-CH 500V 8.5A 3-Pin(3+Tab) TO-220FP Rail - Bulk (Alt: NDF08N50ZG) RoHS: Compliant Min Qty: 625 Container: Bulk	Americas - 0	6250:$0.4929 3125:$0.5059 1875:$0.5119 1250:$0.5189 625:$0.5219
NDF08N50ZG DISTI # 70341191	ON Semiconductor	NDF08N50ZG N-channel MOSFET Transistor,7.5 A,500 V,3-Pin TO-220FP RoHS: Compliant	0	20:$1.0700 50:$1.0200 100:$0.9700 200:$0.9200
NDF08N50ZG DISTI # 863-NDF08N50ZG	ON Semiconductor	MOSFET NFET T0220FP 600V 7.5A 85 RoHS: Compliant	0
NDF08N50ZG	ON Semiconductor	Power Field-Effect Transistor, 7.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	505881	1000:$0.5300 500:$0.5500 100:$0.5800 25:$0.6000 1:$0.6500
NDF08N50ZG	ON Semiconductor		160
NDF08N50ZG	ON Semiconductor	N-Channel Power MOSFET 500 V, 0.69	5	1:$0.8100 100:$0.8100 500:$0.8100 1000:$0.8100

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: NDF08N60ZH OMO.#: OMO-NDF08N60ZH	MOSFET NFET 600V 7.5A
	Mfr.#: NDF08N50ZH OMO.#: OMO-NDF08N50ZH-ON-SEMICONDUCTOR	IGBT Transistors MOSFET NFET 500V 7.5A
	Mfr.#: NDF08N50ZG OMO.#: OMO-NDF08N50ZG-ON-SEMICONDUCTOR	IGBT Transistors MOSFET NFET T0220FP 600V 7.5A 85
	Mfr.#: NDF08N60ZH OMO.#: OMO-NDF08N60ZH-ON-SEMICONDUCTOR	MOSFET NFET 600V 7.5A
	Mfr.#: NDF08N50Z OMO.#: OMO-NDF08N50Z-1190	Neu und Original
	Mfr.#: NDF08N60Z OMO.#: OMO-NDF08N60Z-1190	Neu und Original
	Mfr.#: NDF08N60ZG OMO.#: OMO-NDF08N60ZG-ON-SEMICONDUCTOR	MOSFET N-CH 600V 7.5A TO220FP
	Mfr.#: NDF08N60ZG , MMBFJ175 OMO.#: OMO-NDF08N60ZG-MMBFJ175-1190	Neu und Original
	Mfr.#: NDF08N60ZG-ON OMO.#: OMO-NDF08N60ZG-ON-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von NDF08N50ZG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,28 $~~; ~~0,28 $~~

10: ~~0,26 $~~; ~~2,62 $~~

100: ~~0,25 $~~; ~~24,80 $~~

500: ~~0,23 $~~; ~~117,10 $~~

1000: ~~0,22 $~~; ~~220,40 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

NDF08N5 3
NDF08 8
NDF0 41
NDF 204

NDF08N50ZG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes