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IAUS165N08S5N029ATMA1

IAUS165N08S5N029ATMA1
Mfr. #:
IAUS165N08S5N029ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IAUS165N08S5N029ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IAUS165N08S5N029ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
HSOG-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
165 A
Rds On - Drain-Source-Widerstand:
4.4 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
90 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
167 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
29 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
1800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
IAUS165N08S5N029
Tags
IAUS, IAU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Teil # Mfg. Beschreibung Aktie Preis
IAUS165N08S5N029ATMA1
DISTI # V72:2272_22709243		Infineon Technologies AGN-channel Enhancement mode Power MOSFET3600
  • 3000:$1.8870
  • 1000:$1.9870
  • 500:$2.3250
  • 250:$2.6210
  • 100:$2.7590
  • 25:$2.8650
  • 10:$3.1830
  • 1:$4.1063
IAUS165N08S5N029ATMA1
DISTI # IAUS165N08S5N029ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 660A PG-HSOG-8-1
RoHS: Compliant
Min Qty: 1800
Container: Tape & Reel (TR)		1800In Stock
  • 3600:$1.9818
  • 1800:$2.0861
IAUS165N08S5N029ATMA1
DISTI # IAUS165N08S5N029ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 660A PG-HSOG-8-1
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1800In Stock
  • 500:$2.5477
  • 100:$2.9928
  • 10:$3.6530
  • 1:$4.0700
IAUS165N08S5N029ATMA1
DISTI # IAUS165N08S5N029ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 660A PG-HSOG-8-1
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1800In Stock
  • 500:$2.5477
  • 100:$2.9928
  • 10:$3.6530
  • 1:$4.0700
IAUS165N08S5N029ATMA1
DISTI # 32023019		Infineon Technologies AGN-channel Enhancement mode Power MOSFET3600
  • 4:$4.1063
IAUS165N08S5N029ATMA1
DISTI # 32669696		Infineon Technologies AGN-channel Enhancement mode Power MOSFET1800
  • 1800:$1.8144
IAUS165N08S5N029ATMA1
DISTI # SP001643350		Infineon Technologies AGTransistor MOSFET N-CH 80V 165A 8-Pin HSOG T/R (Alt: SP001643350)
RoHS: Compliant
Min Qty: 1800
Container: Tape and Reel		Europe - 3600
  • 18000:€1.5900
  • 10800:€1.6900
  • 7200:€1.7900
  • 3600:€1.8900
  • 1800:€1.9900
IAUS165N08S5N029ATMA1
DISTI # IAUS165N08S5N029ATMA1		Infineon Technologies AGTransistor MOSFET N-CH 80V 165A 8-Pin HSOG T/R - Tape and Reel (Alt: IAUS165N08S5N029ATMA1)
RoHS: Compliant
Min Qty: 1800
Container: Reel		Americas - 0
  • 7200:$1.7900
  • 10800:$1.7900
  • 18000:$1.7900
  • 3600:$1.8900
  • 1800:$1.9900
IAUS165N08S5N029ATMA1
DISTI # 726-IAUS165N08S5N029		Infineon Technologies AGMOSFET
RoHS: Compliant		100
  • 1:$3.7600
  • 10:$3.2000
  • 100:$2.7700
  • 250:$2.6300
  • 500:$2.3600
  • 1000:$1.9900
  • 1800:$1.8900
  • 3600:$1.8200
IAUS165N08S5N029ATMA1
DISTI # IAUS165N08S5N029		Infineon Technologies AGTransistor: N-MOSFET,unipolar,80V,165A,Idm:660A,167W1798
  • 100:$2.2000
  • 25:$2.3600
  • 5:$2.5300
  • 1:$2.8300
IAUS165N08S5N029ATMA1
DISTI # XSKDRABV0042292		Infineon Technologies AG 
RoHS: Compliant		5400 in Stock0 on Order
  • 5400:$2.5400
  • 1800:$2.7200
Bild Teil # Beschreibung
IAUS165N08S5N029ATMA1

Mfr.#: IAUS165N08S5N029ATMA1

OMO.#: OMO-IAUS165N08S5N029ATMA1

 MOSFET
IAUS165N08S5N029ATMA1

Mfr.#: IAUS165N08S5N029ATMA1

OMO.#: OMO-IAUS165N08S5N029ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 80V 660A PG-HSOG-8-1
Verfügbarkeit
Aktie:
100
Auf Bestellung:
2083
Menge eingeben:
Der aktuelle Preis von IAUS165N08S5N029ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,76 $
3,76 $
10
3,20 $
32,00 $
100
2,77 $
277,00 $
250
2,63 $
657,50 $
500
2,36 $
1 180,00 $
1000
1,99 $
1 990,00 $
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