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PD57018TR-E

PD57018TR-E
Mfr. #:
PD57018TR-E
Hersteller:
STMicroelectronics
Beschreibung:
RF MOSFET Transistors POWER R.F.
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PD57018TR-E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
PD57018TR-E Mehr Informationen PD57018TR-E Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
2.5 A
Vds - Drain-Source-Durchbruchspannung:
65 V
Rds On - Drain-Source-Widerstand:
760 mOhms
Gewinnen:
16.5 dB
Ausgangsleistung:
18 W
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
PowerSO-10RF-Formed-4
Verpackung:
Spule
Aufbau:
Single
Höhe:
3.5 mm
Länge:
7.5 mm
Arbeitsfrequenz:
1 GHz
Serie:
PD57018-E
Typ:
HF-Leistungs-MOSFET
Breite:
9.4 mm
Marke:
STMicroelectronics
Kanalmodus:
Erweiterung
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
31.7 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
600
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
20 V
Gewichtseinheit:
0.105822 oz
Tags
PD5701, PD570, PD57, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin(2+Tab) PowerSO-10RF (Straight lead) T/R
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***th Star Micro
Transistor MOSFET N-CH 65V 2.5A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ure Electronics
PD57018-E Series 1 GHz 18 W 65 V N-Channel RF Power Transistor - POWERSO-10RF
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
RF TRANSISTOR, 65V, 945MHZ, POWERSO10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 945MHz; RF Transistor Case: PowerSO-1
***(Formerly Allied Electronics)
IRF7103PBF Dual N-channel MOSFET Transistor, 3 A, 50 V, 8-Pin SOIC | Infineon IRF7103PBF
***eco
Transistor MOSFET N Channel 50 Volt 3 Amp 8-Pin SOIC Tape and Reel
***itex
Transistor: 2xN-MOSFET; unipolar; 50V; 3A; 0.13ohm; 2W; -55+150 deg.C; SMD; SO8
***ure Electronics
Dual N-Channel 50 V 0.13 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8
***et Japan
Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R
***nell
MOSFET, DUAL NN LOGIC SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Di
***ark
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:50V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:3A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7103TRPBF.
***(Formerly Allied Electronics)
MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W
***ure Electronics
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
***enic
60V 4.7A 2.4W 120m´Î@10V3.2A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***nsix Microsemi
Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No
***nell
MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
IRFL014TRPBF N-channel MOSFET Transistor; 2.7 A; 60 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***SIT Distribution GmbH
Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Teil # Mfg. Beschreibung Aktie Preis
PD57018TR-E
DISTI # V72:2272_17706242		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
RoHS: Compliant		335
  • 250:$28.8500
  • 100:$30.3200
  • 25:$33.3100
  • 10:$34.6500
  • 1:$37.4500
PD57018TR-E
DISTI # 497-6477-1-ND		STMicroelectronicsTRANSISTOR RF POWERSO-10
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    PD57018TR-E
    DISTI # 497-6477-6-ND    		STMicroelectronicsTRANSISTOR RF POWERSO-10
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      PD57018TR-E
      DISTI # 497-6477-2-ND      		STMicroelectronicsTRANSISTOR RF POWERSO-10
      RoHS: Compliant
      Min Qty: 600
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 600:$23.1702
      PD57018TR-E
      DISTI # 27537212      		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
      RoHS: Compliant      		335
      • 250:$28.8600
      • 100:$30.3100
      • 25:$33.3300
      • 10:$34.6700
      • 1:$37.5400
      PD57018TR-E
      DISTI # PD57018TR-E      		STMicroelectronicsTrans MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R - Tape and Reel (Alt: PD57018TR-E)
      RoHS: Compliant
      Min Qty: 600
      Container: Reel      		Americas - 0
      • 600:$25.0900
      • 1200:$23.8900
      • 2400:$22.8900
      • 3600:$21.7900
      • 6000:$21.3900
      PD57018-E
      DISTI # 511-PD57018-E      		STMicroelectronicsRF MOSFET Transistors POWER RF Transistor
      RoHS: Compliant      		92
      • 1:$32.4100
      • 5:$32.0700
      • 10:$29.8900
      • 25:$28.5500
      • 100:$25.5300
      • 250:$24.3500
      PD57018TR-E
      DISTI # 511-PD57018TR-E      		STMicroelectronicsRF MOSFET Transistors POWER R.F.
      RoHS: Compliant      		0
      • 1:$32.4100
      • 5:$32.0700
      • 10:$29.8900
      • 25:$28.5500
      • 100:$25.5300
      • 250:$24.3500
      • 600:$23.1800
      PD57018TR-E
      DISTI # PD57018TR-E      		STMicroelectronicsRF POWER TRANSISTOR
      RoHS: Compliant      		0
      • 600:$23.0600
      • 1000:$21.9000
      PD57018TR-E
      DISTI # C1S730200364012      		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
      RoHS: Compliant      		335
      • 250:$28.9200
      • 100:$30.2800
      • 25:$33.5700
      • 10:$34.8600
      • 1:$37.4400
      Bild Teil # Beschreibung
      PD57006S

      Mfr.#: PD57006S

      OMO.#: OMO-PD57006S

      		 RF MOSFET Transistors N-Ch 65 Volt 1.0 Amp
      PD57060STR-E

      Mfr.#: PD57060STR-E

      OMO.#: OMO-PD57060STR-E

      		 RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
      PD57002SK

      Mfr.#: PD57002SK

      OMO.#: OMO-PD57002SK-1190

      		 Neu und Original
      PD57006

      Mfr.#: PD57006

      OMO.#: OMO-PD57006-1152

      		 RF MOSFET, N CHANNEL, 28V, POWERSO-10RF, Drain Source Voltage Vds:65V, Continuous Drain Current Id:1A, Power Dissipation Pd:20W, Operating Frequency Min:925MHz, Operating Frequency Max:960MHz, R
      PD57006E

      Mfr.#: PD57006E

      OMO.#: OMO-PD57006E-1190

      		 Neu und Original
      PD57045S-E

      Mfr.#: PD57045S-E

      OMO.#: OMO-PD57045S-E-STMICROELECTRONICS

      		 FET RF 65V 945MHZ PWRSO-10
      PD57070

      Mfr.#: PD57070

      OMO.#: OMO-PD57070-1190

      		 Neu und Original
      PD57070SE

      Mfr.#: PD57070SE

      OMO.#: OMO-PD57070SE-1190

      		 Neu und Original
      PD57018S-E

      Mfr.#: PD57018S-E

      OMO.#: OMO-PD57018S-E-STMICROELECTRONICS

      		 MOSFET 8 BITS MICROCONTR
      PD57030

      Mfr.#: PD57030

      OMO.#: OMO-PD57030-STMICROELECTRONICS

      		 FET RF 65V 945MHZ PWRSO-10
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von PD57018TR-E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      32,41 $
      32,41 $
      5
      32,07 $
      160,35 $
      10
      29,89 $
      298,90 $
      25
      28,55 $
      713,75 $
      100
      25,53 $
      2 553,00 $
      250
      24,35 $
      6 087,50 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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