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PHD36N03LT,118

PHD36N03LT,118
Mfr. #:
PHD36N03LT,118
Hersteller:
NXP Semiconductors
Beschreibung:
MOSFET N-CH 30V 43.4A DPAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PHD36N03LT,118 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PHD36N03LT,118 DatasheetPHD36N03LT,118 Datasheet (P4-P6)PHD36N03LT,118 Datasheet (P7-P9)PHD36N03LT,118 Datasheet (P10-P12)PHD36N03LT,118 Datasheet (P13)
ECAD Model:
Mehr Informationen:
PHD36N03LT,118 Mehr Informationen PHD36N03LT,118 Product Details
Produkteigenschaft
Attributwert
Tags
PHD36N03L, PHD36N0, PHD36, PHD3, PHD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
Transistor MOSFET N-CH 30V 43.4A 3-Pin (2+Tab) DPAK T/R
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Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:45A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):11.7mohm; Rds(on) Test Voltage, Vgs:11.5V; Threshold Voltage, Vgs Typ:1.7V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes
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Power MOSFET 25 V, 45 A, Single N-Channel, DPAK
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***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:45A; On Resistance, Rds(on):12.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
***ser
MOSFETs- Power and Small Signal 25V 45A N-Channel No-Cancel/No-Return
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Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***et
NFET DPAK 25V 45A 14R TR
***or
MOSFET N-CH 25V 7.8A/45A DPAK
***(Formerly Allied Electronics)
IRLR7807ZTRPBF N-channel MOSFET Transistor; 43 A; 30 V; 3+Tab-Pin DPAK
***ure Electronics
Single N-Channel 30V 13.8 mOhm 7 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***nell
MOSFET, N-CH, 30V, 43A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Po
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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.019Ohm;ID 55A;D-Pak (TO-252AA);PD 107W
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Single N-Channel 30 V 0.019 Ohm 50 nC HEXFET® Power Mosfet - TO-252AA
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30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
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Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:55A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes
***nell
MOSFET, N LOGIC D-PAK; Transistor type:MOSFET; Current, Id cont:45A; Resistance, Rds on:0.019ohm; Case style:TO-252 (D-Pak); Current, Idm pulse:69A; Marking, SMD:IRLR3103; Power dissipation:69W; Power, Pd:69W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:30V; Voltage, Vgs th max:2V
Teil # Mfg. Beschreibung Aktie Preis
PHD36N03LT,118
DISTI # PHD36N03LT,118-ND		NXP SemiconductorsMOSFET N-CH 30V 43.4A DPAK
RoHS: Compliant
Min Qty: 10000
Container: Tape & Reel (TR)		Limited Supply - Call
    PHD36N03LT /T3
    DISTI # 771-PHD36N03LT/T3    		NXP SemiconductorsBipolar Transistors - BJT TAPE13 MOSFET
    RoHS: Compliant    		0
      PHD36N03LT,118
      DISTI # N/A      		NXP SemiconductorsMOSFET PHD36N03LT/DPAK/REEL13//0
        Bild Teil # Beschreibung
        PHD36N03

        Mfr.#: PHD36N03

        OMO.#: OMO-PHD36N03-1190

        		 Neu und Original
        PHD36N03LT

        Mfr.#: PHD36N03LT

        OMO.#: OMO-PHD36N03LT-1190

        		 Neu und Original
        PHD36N03LT(PRFRMD)

        Mfr.#: PHD36N03LT(PRFRMD)

        OMO.#: OMO-PHD36N03LT-PRFRMD--1190

        		 Neu und Original
        PHD36N03LT+118

        Mfr.#: PHD36N03LT+118

        OMO.#: OMO-PHD36N03LT-118-1190

        		 Neu und Original
        PHD36N03LT,118

        Mfr.#: PHD36N03LT,118

        OMO.#: OMO-PHD36N03LT-118-NXP-SEMICONDUCTORS

        		 MOSFET N-CH 30V 43.4A DPAK
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4000
        Menge eingeben:
        Der aktuelle Preis von PHD36N03LT,118 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
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        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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