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FDMC8854

FDMC8854
Mfr. #:
FDMC8854
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 30V N-Ch Power Trench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMC8854 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMC8854 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-33-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
15 A
Rds On - Drain-Source-Widerstand:
5.7 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
41 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
3.3 mm
Serie:
FDMC8854
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
60 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
31 ns
Typische Einschaltverzögerungszeit:
13 ns
Gewichtseinheit:
0.005832 oz
Tags
FDMC88, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power Trench® MOSFET 30V, 15A, 5.7mΩ
***ure Electronics
N-Channel 30 V 5.7 mOhm Surface Mount Power Trench Mosfet - Power 33
***el Electronic
RENESAS - ICL7660CBAZ-T - DC/DC-Ladungspumpen-Spannungsregler, einstellbar, 1.5V bis 10Vin, -10V bis -1.5V/45mAout, NSOIC-8
***rchild Semiconductor
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications.
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:15A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):4.4mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.9V
***nell
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:15A; Resistance, Rds On:0.0057ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:Power 33; Termination Type:SMD; Current, Idm Pulse:30A; Power Dissipation:2W; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
***ure Electronics
Single N-Channel 30 V 8.5 mOhm 30 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:71A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 71A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:45W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:45W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
Single N-Channel 30 V 5 mOhm 26 nC OptiMOS™ Power Mosfet - TSDSON-8
***ment14 APAC
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
Single N-Channel 30 V 6.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC Tube
***icontronic
Small Signal Field-Effect Transistor, 17.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17.2A; On Resistance Rds(On):0.0047Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
***ark
MOSFET, N CH, 30V, 42A, POWER 56; Transistor Polarity:N Channel; Continuous Drai
*** Source Electronics
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R / MOSFET N-CH 30V 19A POWER56
***ure Electronics
N-Channel 30 V 4.9 mO Surface Mount PowerTrench Mosfet - Power 56
***el Electronic
VISHAY SEMICONDUCTOR TSAL7600 Infrared Emitter, 100 mA, 800 ns, 800 ns, 30 , 1.35 V, -40 C
*** Stop Electro
Power Field-Effect Transistor, 19A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0312S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ark
N CH POWER MOSFET, HEXFET, 30V, 17.2A, SOIC-8; Transistor Polarity:N Channel; Co
***ernational Rectifier
Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***(Formerly Allied Electronics)
MOSFET, 30V, 16.6A, 6 MOHM, 24 NC QG, SO-8, HALOGEN-FREE | Infineon IRF8113GPBF
***ical
Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC
***eco
30V,16A,5.5 OHMS, NCH,SINGLE, SO8,POWER TRENCH MOSFET
***Yang
TRANS MOSFET N-CH 30V 16A 8SOIC - Bulk
***inecomponents.com
30V N-Channel PowerTrench MOSFET
***ark
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:16A; Resistance, Rds On:0.0055ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:SOIC; Termination ;RoHS Compliant: Yes
Fairchild PowerTrench MOSFETs
FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs
ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FDMC8854
DISTI # 26636335		ON Semiconductor30V,15A, 5.7 OHMS, NCH, POWER3000
  • 9000:$0.3750
  • 3000:$0.3842
FDMC8854
DISTI # FDMC8854CT-ND		ON SemiconductorMOSFET N-CH 30V 15A POWER33
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		432In Stock
  • 1000:$0.5775
  • 500:$0.7315
  • 100:$0.9432
  • 10:$1.1930
  • 1:$1.3500
FDMC8854
DISTI # FDMC8854DKR-ND		ON SemiconductorMOSFET N-CH 30V 15A POWER33
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		432In Stock
  • 1000:$0.5775
  • 500:$0.7315
  • 100:$0.9432
  • 10:$1.1930
  • 1:$1.3500
FDMC8854
DISTI # FDMC8854TR-ND		ON SemiconductorMOSFET N-CH 30V 15A POWER33
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.5233
FDMC8854
DISTI # FDMC8854		ON SemiconductorTrans MOSFET N-CH 30V 15A 8-Pin Power 33 T/R - Bulk (Alt: FDMC8854)
RoHS: Compliant
Min Qty: 511
Container: Bulk		Americas - 0
  • 511:$0.3919
  • 513:$0.3889
  • 1024:$0.3839
  • 2555:$0.3789
  • 5110:$0.3699
FDMC8854
DISTI # FDMC8854		ON SemiconductorTrans MOSFET N-CH 30V 15A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC8854)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.5789
  • 6000:$0.5749
  • 12000:$0.5679
  • 18000:$0.5609
  • 30000:$0.5469
FDMC8854
DISTI # 67P3477		ON SemiconductorN CHANNEL MOSFET, 30V, 15A POWER 33,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:1.9V RoHS Compliant: Yes0
  • 1000:$0.5360
  • 500:$0.6720
  • 250:$0.7150
  • 100:$0.7570
  • 50:$0.8680
  • 25:$0.9780
  • 1:$1.1500
FDMC8854
DISTI # 52M3180		ON SemiconductorN CHANNEL MOSFET, 30V, 15A POWER 33,Continuous Drain Current Id:15A,Drain Source Voltage Vds:30V,Filter Terminals:Surface Mount,No. of Pins:8,On Resistance Rds(on):4.4mohm,Operating Temperature Max:150°C RoHS Compliant: Yes0
  • 24000:$0.4480
  • 9000:$0.4610
  • 1:$0.4780
FDMC8854
DISTI # 512-FDMC8854		ON SemiconductorMOSFET 30V N-Ch Power Trench MOSFET
RoHS: Compliant		4114
  • 1:$1.1200
  • 10:$0.9520
  • 100:$0.7310
  • 500:$0.6460
  • 1000:$0.5100
  • 3000:$0.4520
  • 9000:$0.4350
FDMC8854ON SemiconductorPower Field-Effect Transistor, 15A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		3590
  • 1000:$0.6500
  • 500:$0.6800
  • 100:$0.7100
  • 25:$0.7400
  • 1:$0.7900
FDMC8854Fairchild Semiconductor CorporationPower Field-Effect Transistor, 15A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		101155
  • 1000:$0.6500
  • 500:$0.6800
  • 100:$0.7100
  • 25:$0.7400
  • 1:$0.7900
FDMC8854Fairchild Semiconductor Corporation 3173
    FDMC8854
    DISTI # 6710393P    		ON SemiconductorMOSFET N-CHANNEL 30V 15A POWER 33, RL955
    • 100:£0.8340
    • 50:£0.8500
    FDMC8854Fairchild Semiconductor Corporation15 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET100
    • 57:$0.6300
    • 12:$0.9000
    • 1:$1.8000
    FDMC8854Fairchild Semiconductor CorporationPower Field-Effect Transistor, 15A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		Europe - 3000
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1987
      Menge eingeben:
      Der aktuelle Preis von FDMC8854 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,12 $
      1,12 $
      10
      0,95 $
      9,52 $
      100
      0,73 $
      73,10 $
      500
      0,65 $
      323,00 $
      1000
      0,51 $
      510,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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