CPH6020-TL-E

CPH6020-TL-E
Mfr. #:
CPH6020-TL-E
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT BIP NPN 0.15A 8V FT=16G
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CPH6020-TL-E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-26-6
Polarität des Transistors:
NPN
Aufbau:
Dual
Kollektor- Emitterspannung VCEO Max:
8 V
Kollektor- Basisspannung VCBO:
15 V
Emitter- Basisspannung VEBO:
2 V
Bandbreitenprodukt fT gewinnen:
16 GHz
Maximale Betriebstemperatur:
+ 150 C
Serie:
CPH6020
DC-Stromverstärkung hFE Max:
150
Verpackung:
Spule
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
150 mA
DC-Kollektor/Basisverstärkung hfe Min:
60
Pd - Verlustleistung:
700 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000529 oz
Tags
CPH602, CPH60, CPH6, CPH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
RF Transistor, NPN Single, 8 V, 150 mA, fT = 16 GHz
***r Electronics
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, NPN
***ark
Rf Transistor, 8V, 150Ma, Ft=16Ghz, Npn Single Cph6 / Reel
***(Formerly Allied Electronics)
ON Semi CPH6003A-TL-E NPN RF Bipolar Transistor; 0.15 A; 12 V; 6-Pin CPH
***r Electronics
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, NPN
***ark
Transistor, Rf, Npn, 12V, 0.15A, Sot-457 Rohs Compliant: Yes
***emi
RF Transistor, 12 V, 150 mA, fT = 7 GHz
***et
Trans GP BJT NPN 12V 0.15A 6-Pin CPH T/R
***nell
TRANSISTOR, RF, NPN, 12V, 0.15A, SOT-457; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 7GHz; Power Dissipation Pd: 800mW; DC Collector Current: 150mA; DC Current Gain hFE: 100hFE; RF Transistor Case: SOT-457; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Source Electronics
Trans GP BJT NPN/PNP 30V 0.5A 700mW 6-Pin TSOT-23 T/R / TRANS NPN/PNP 30V 0.5A 6SSOT
*** Electronics
FAIRCHILD SEMICONDUCTOR FMB2227A. BIPOLAR TRANSISTOR, NPN & PNP 30V SSOT-6
***r Electronics
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
NPN/PNP 500 mW 30 V 500 mA Surface Mount General Purpose Transistor - SSOT-6
***emi
NPN & PNP Complementary Dual Transistor
***ark
Bipolar Transistor; Transistor Polarity:NPN & PNP; Power Dissipation, Pd:0.7W; DC Current Gain Min (hfe):30; Package/Case:SuperSOT-6; C-E Breakdown Voltage:40V; DC Collector Current:500A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***rchild Semiconductor
This complementary device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics.
***ow.cn
Trans GP BJT NPN/PNP 40V 0.2A 700mW 6-Pin TSOT-23 T/R
***ure Electronics
NPN/PNP 40 V 200 mA 700 mW SMT General Purpose Amplifier - SSOT-6
*** Stop Electro
RF Small Signal Bipolar Transistor, 0.2A I(C), 2-Element, Silicon, NPN and PNP
***emi
NPN & PNP General Purpose Amplifier
***nell
TRANS, NPN/PNP, 40V, 0.2A, SUPERSOT; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 700mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Transistor Case Style: SuperSOT
***ark
Bipolar Transistor; Transistor Polarity:NPN & PNP; Power Dissipation, Pd:0.7W; DC Current Gain Min (hfe):30; Package/Case:SuperSOT-6; C-E Breakdown Voltage:40V; DC Collector Current:200A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***rchild Semiconductor
This complementary device is designed for use as a general-purpose amplifier and switch, The useful dynamic range extends to 100 mA as a switch and 100 MHz as an amplifier. Sourced from Process 23 and 66. See FFB3904 (NPN) and FFB3906 (PNP) for characteristics.
***(Formerly Allied Electronics)
DMG204B00R Dual NPN+PNP Bipolar Transistor; 0.1 A; 0.5 A; 10V; 50V; 6-Pin Mini6 G4 B
***er Electronics
SC,COMPOSITE TRANSISTOR / PNP + NPN DUAL, LOW VCE(SAT), VCEO:-10V/50V, IC:-500MA/100MA
***el Electronic
Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
***roFlash
Sc, Composite Transistor / PNP + NPN Dual, Low Vce(sat), Vceo: -10V/20V, IC: -500MA/500MA
***el Electronic
Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
***(Formerly Allied Electronics)
Transistor NPN + PNP Mini6-G4-B
***p One Stop Global
Trans GP BJT NPN 30V 1A 1250mW 6-Pin TSMT T/R
***i-Key
TRANS DUAL NPN 30V 1A 6TSMT
Teil # Mfg. Beschreibung Aktie Preis
CPH6020-TL-E
DISTI # CPH6020-TL-E-ND
ON SemiconductorRF TRANS NPN 8V 16GHZ 6CPH
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.1953
CPH6020-TL-E
DISTI # CPH6020-TL-E
ON SemiconductorTrans GP BJT NPN 8V 0.15A 6-Pin CPH T/R - Tape and Reel (Alt: CPH6020-TL-E)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.1559
  • 6000:$0.1549
  • 12000:$0.1529
  • 18000:$0.1509
  • 30000:$0.1479
CPH6020-TL-E
DISTI # 65T1170
ON SemiconductorBIP NPN 0.15A 8V FT=16G / REEL0
  • 1:$0.2400
CPH6020-TL-E
DISTI # 863-CPH6020-TL-E
ON SemiconductorBipolar Transistors - BJT BIP NPN 0.15A 8V FT=16G
RoHS: Compliant
2969
  • 1:$0.5400
  • 10:$0.4500
  • 100:$0.2800
  • 1000:$0.2200
  • 3000:$0.1800
  • 9000:$0.1700
  • 24000:$0.1600
Bild Teil # Beschreibung
BFP780H6327XTSA1

Mfr.#: BFP780H6327XTSA1

OMO.#: OMO-BFP780H6327XTSA1

RF Amplifier RF BIP TRANSISTORS
TSX9292IQ2T

Mfr.#: TSX9292IQ2T

OMO.#: OMO-TSX9292IQ2T

Operational Amplifiers - Op Amps 10MHz, rail-to-rail 16V CMOS op-amps
RCLAMP3354S.TCT

Mfr.#: RCLAMP3354S.TCT

OMO.#: OMO-RCLAMP3354S-TCT

TVS Diodes / ESD Suppressors 3.3V 4 LINE LOW CAP
SI8622BB-B-IS

Mfr.#: SI8622BB-B-IS

OMO.#: OMO-SI8622BB-B-IS

Digital Isolators 2.5 kV 1 forward & 1 reverse 2-channel isolator
BFP196WNH6327XTSA1

Mfr.#: BFP196WNH6327XTSA1

OMO.#: OMO-BFP196WNH6327XTSA1

RF Bipolar Transistors RF BIP TRANSISTORS
BFQ790H6327XTSA1

Mfr.#: BFQ790H6327XTSA1

OMO.#: OMO-BFQ790H6327XTSA1

RF Bipolar Transistors RF BIP TRANSISTORS
NCP15XH103F03RC

Mfr.#: NCP15XH103F03RC

OMO.#: OMO-NCP15XH103F03RC-MURATA-ELECTRONICS

Thermistors - NTC 10K OHM 1%
RCLAMP3354S.TCT

Mfr.#: RCLAMP3354S.TCT

OMO.#: OMO-RCLAMP3354S-TCT-SEMTECH

TVS DIODE 3.3V 16V SOT23-5
TSX9292IQ2T

Mfr.#: TSX9292IQ2T

OMO.#: OMO-TSX9292IQ2T-STMICROELECTRONICS

IC OPAMP R-R 16MHZ 8DFN
SI8622BB-B-IS

Mfr.#: SI8622BB-B-IS

OMO.#: OMO-SI8622BB-B-IS-SILICON-LABS

DGTL ISO 2.5KV 2CH GEN PUR 8SOIC
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von CPH6020-TL-E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,54 $
0,54 $
10
0,45 $
4,50 $
100
0,28 $
28,00 $
1000
0,22 $
220,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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