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HN2C01FU-GR(T5L,F)

HN2C01FU-GR(T5L,F)
Mfr. #:
HN2C01FU-GR(T5L,F)
Hersteller:
Toshiba
Beschreibung:
Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HN2C01FU-GR(T5L,F) Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HN2C01FU-GR(T5L,F) Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
US-6
Polarität des Transistors:
NPN
Aufbau:
Dual
Kollektor- Emitterspannung VCEO Max:
50 V
Kollektor- Basisspannung VCBO:
60 V
Emitter- Basisspannung VEBO:
5 V
Kollektor-Emitter-Sättigungsspannung:
0.1 V
Maximaler DC-Kollektorstrom:
150 mA
Bandbreitenprodukt fT gewinnen:
80 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 125 C
Serie:
HN2C01
DC-Stromverstärkung hFE Max:
400
Verpackung:
Spule
Marke:
Toshiba
DC-Kollektor/Basisverstärkung hfe Min:
120
Pd - Verlustleistung:
200 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Tags
HN2C01FU-GR(T, HN2C01FU-G, HN2C01FU, HN2C01, HN2C0, HN2C, HN2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN 50V 0.15A 6-Pin US T/R
***i-Key
TRANS 2NPN 50V 0.15A US6
*** Source Electronics
Trans GP BJT NPN/PNP 50V 0.15A 150mW 6-Pin UMT T/R / TRANS NPN/PNP 50V 0.15A 6UMT
***(Formerly Allied Electronics)
ROHM UMZ1NTR Dual NPN+PNP Bipolar Transistor, 0.15 A, 50 V, 6-Pin SC-88 | ROHM Semiconductor UMZ1NTR
***ure Electronics
UMZ1N Series 50 V 150 mA SMT NPN/PNP General Purpose Dual Transistor - SC-88
***ment14 APAC
Transistor DUAL UM6 PNP/NPN; Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:150mW; DC
***nell
TRANSISTOR DUAL UM6 PNP/NPN; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 150mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 400mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 180MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: General Purpose; Transition Frequency ft: 180MHz
***roFlash
ROHM UMX3NTR Dual NPN Bipolar Transistor; 0.15 A; 50 V; 6-Pin SC-88
***ure Electronics
UMX3N Series 50 V 150 mA 150 mW SMT Dual NPN General purpose Transistor-SC-88
***et
Trans GP BJT NPN 50V 0.15A 6-Pin UMT T/R
***nell
TRANSISTOR DUAL UM6 NPN/NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 150mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 400mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 180MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: General Purpose; Transition Frequency ft: 180MHz
***roFlash
ROHM UMX1NTN Dual NPN Bipolar Transistor; 0.15 A; 50 V; 6-Pin SC-88
***SIT Distribution GmbH
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***ure Electronics
UMX1N Series 50 V 150 mA SMT Dual NPN General purpose Transistor-SC-88
***ical
Trans GP BJT NPN 50V 0.15A 6-Pin UMT T/R
***ark
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:50V; Dc Collector Current:150Ma; Power Dissipation Pd:150Mw; Dc Current Gain Hfe:120Hfe; No. Of Pins:6Pins; Transistor Mounting:surface Mount; Product Range:- Rohs Compliant: Yes
***et
Trans Digital BJT NPN 50V 100mA 6-Pin US T/R
***el Electronic
Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
***i-Key
TRANS 2NPN PREBIAS 0.2W US6
***ca Corp
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon
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BC846AS Series 65 V 100 mA Dual NPN Small Signal SMT Transistor - SOT-363
***ical
Trans GP BJT NPN 65V 0.1A 200mW 6-Pin SOT-363 T/R
***ment14 APAC
BIPOLAR ARRAY, DUAL NPN, 65V/0.1A/SOT363;
***pmh
TRANS NPN/PNP 40V/60V 0.6A SOT26
***ark
General Purpose Transistor Sot363 T&r 3K
***itex
Transistor: NPN; bipolar; 45V; 0.1A; 210mW; -55+150 deg.C; SMD; SOT363
***ure Electronics
BC847BS Series Dual NPN 45 V 200 mW Small Signal Transistor SMT - SOT-363
***roFlash
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
***p One Stop Global
Trans GP BJT NPN 45V 0.1A 200mW Automotive 6-Pin SOT-363 T/R
***(Formerly Allied Electronics)
Transistor Dual NPN 45V 0.1A SOT363-6 | Diodes Inc BC847BS-7-F
***ment14 APAC
TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:400mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; Package / Case:SOT-363; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:Small Signal
Teil # Mfg. Beschreibung Aktie Preis
HN2C01FU-GR(T5L,F)
DISTI # C1S751200945236		Toshiba America Electronic ComponentsTrans GP BJT NPN 50V 0.15A 6-Pin US T/R
RoHS: Compliant		2900
  • 1000:$0.3280
  • 100:$0.3450
HN2C01FU-GR(T5L,F)
DISTI # HN2C01FU-GR(T5LF)CT-ND		Toshiba America Electronic ComponentsTRANS 2NPN 50V 0.15A US6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8735In Stock
  • 1000:$0.0784
  • 500:$0.1022
  • 250:$0.1278
  • 100:$0.1806
  • 25:$0.2384
  • 10:$0.3070
  • 1:$0.4300
HN2C01FU-GR(T5L,F)
DISTI # HN2C01FU-GR(T5LF)DKR-ND		Toshiba America Electronic ComponentsTRANS 2NPN 50V 0.15A US6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8735In Stock
  • 1000:$0.1045
  • 500:$0.1363
  • 250:$0.1703
  • 100:$0.2407
  • 25:$0.3180
  • 10:$0.4090
  • 1:$0.5700
HN2C01FU-GR(T5L,F)
DISTI # HN2C01FU-GR(T5LF)TR-ND		Toshiba America Electronic ComponentsTRANS 2NPN 50V 0.15A US6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 150000:$0.0294
  • 75000:$0.0331
  • 30000:$0.0353
  • 15000:$0.0375
  • 6000:$0.0441
  • 3000:$0.0507
HN2C01FU-GR(T5L,F)
DISTI # 757-HN2C01FU-GRT5LF		Toshiba America Electronic ComponentsBipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6
RoHS: Compliant		5450
  • 1:$0.5500
  • 10:$0.3030
  • 100:$0.1300
  • 1000:$0.1000
  • 3000:$0.0760
  • 9000:$0.0680
  • 24000:$0.0630
  • 45000:$0.0560
  • 99000:$0.0540
Bild Teil # Beschreibung
HN2C01FU-GR(T5L,F)

Mfr.#: HN2C01FU-GR(T5L,F)

OMO.#: OMO-HN2C01FU-GR-T5L-F-

 Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6
HN2C01FU-GR(T5L,F)

Mfr.#: HN2C01FU-GR(T5L,F)

OMO.#: OMO-HN2C01FU-GR-T5L-F--TOSHIBA-SEMICONDUCTOR-AND-STOR

 Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6
HN2C01FU-GR(T5LF)DKR-ND

Mfr.#: HN2C01FU-GR(T5LF)DKR-ND

OMO.#: OMO-HN2C01FU-GR-T5LF-DKR-ND-1190

 Neu und Original
HN2C01FU-Y(TE85LFCT-ND

Mfr.#: HN2C01FU-Y(TE85LFCT-ND

OMO.#: OMO-HN2C01FU-Y-TE85LFCT-ND-1190

 Neu und Original
HN2C01FU-Y(TE85LFTR-ND

Mfr.#: HN2C01FU-Y(TE85LFTR-ND

OMO.#: OMO-HN2C01FU-Y-TE85LFTR-ND-1190

 Neu und Original
HN2C01FU-GR

Mfr.#: HN2C01FU-GR

OMO.#: OMO-HN2C01FU-GR-1190

 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
HN2C01FU-GR(L1G)

Mfr.#: HN2C01FU-GR(L1G)

OMO.#: OMO-HN2C01FU-GR-L1G--1190

 Neu und Original
HN2C01FU-Y

Mfr.#: HN2C01FU-Y

OMO.#: OMO-HN2C01FU-Y-1190

 Neu und Original
HN2C01FU-Y(TE85L,F

Mfr.#: HN2C01FU-Y(TE85L,F

OMO.#: OMO-HN2C01FU-Y-TE85L-F-TOSHIBA-SEMICONDUCTOR-AND-STOR

 Neu und Original
HN2C01FU-Y(TE85L,F)

Mfr.#: HN2C01FU-Y(TE85L,F)

OMO.#: OMO-HN2C01FU-Y-TE85L-F--1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von HN2C01FU-GR(T5L,F) dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,55 $
0,55 $
10
0,30 $
3,03 $
100
0,13 $
13,00 $
1000
0,10 $
100,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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