IPB054N08N3GATMA1

IPB054N08N3GATMA1
Mfr. #:
IPB054N08N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB054N08N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
4.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
69 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
150 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
52 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
66 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
38 ns
Typische Einschaltverzögerungszeit:
18 ns
Teil # Aliase:
G IPB054N08N3 IPB54N8N3GXT SP000395166
Gewichtseinheit:
0.139332 oz
Tags
IPB054N08N3G, IPB054N08, IPB054, IPB05, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 80 V 5.4 mOhm 52 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N CH, 80A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:80A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
Teil # Mfg. Beschreibung Aktie Preis
IPB054N08N3GATMA1
DISTI # V72:2272_06383364
Infineon Technologies AGTrans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
950
  • 500:$0.8359
  • 250:$0.9288
  • 100:$1.0320
  • 25:$1.1850
  • 10:$1.3166
  • 1:$1.7176
IPB054N08N3GATMA1
DISTI # V36:1790_06383364
Infineon Technologies AGTrans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$0.6515
  • 500000:$0.6519
  • 100000:$0.7021
  • 10000:$0.8012
  • 1000:$0.8183
IPB054N08N3GATMA1
DISTI # IPB054N08N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 80V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 10000:$0.7149
  • 5000:$0.7337
  • 2000:$0.7619
  • 1000:$0.8183
IPB054N08N3GATMA1
DISTI # IPB054N08N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 80V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$1.0173
  • 100:$1.2382
  • 10:$1.5400
  • 1:$1.7100
IPB054N08N3GATMA1
DISTI # IPB054N08N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 80V 80A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$1.0173
  • 100:$1.2382
  • 10:$1.5400
  • 1:$1.7100
IPB054N08N3GATMA1
DISTI # 31984708
Infineon Technologies AGTrans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
950
  • 12:$1.7176
IPB054N08N3GATMA1
DISTI # SP000395166
Infineon Technologies AGTrans MOSFET N-CH 80V 80A 3-Pin TO-263 T/R (Alt: SP000395166)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 2000
  • 10000:€0.5439
  • 6000:€0.5859
  • 4000:€0.6349
  • 2000:€0.6929
  • 1000:€0.8469
IPB054N08N3GXT
DISTI # IPB054N08N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB054N08N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.5459
  • 6000:$0.5559
  • 4000:$0.5749
  • 2000:$0.5969
  • 1000:$0.6189
IPB054N08N3 G
DISTI # 726-IPB054N08N3G
Infineon Technologies AGMOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
RoHS: Compliant
42
  • 1:$1.5800
  • 10:$1.3400
  • 100:$1.0700
  • 500:$0.9410
  • 1000:$0.7800
  • 2000:$0.7260
  • 5000:$0.6990
  • 10000:$0.6720
IPB054N08N3GATMA1
DISTI # 726-IPB054N08N3GATMA
Infineon Technologies AGMOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
RoHS: Compliant
90
  • 1:$1.5800
  • 10:$1.3400
  • 100:$1.0700
  • 500:$0.9410
  • 1000:$0.7800
  • 2000:$0.7260
  • 5000:$0.6990
  • 10000:$0.6720
IPB054N08N3GATMA1
DISTI # 2480800RL
Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3
RoHS: Compliant
0
  • 1000:$1.1800
  • 500:$1.4200
  • 100:$1.6100
  • 10:$2.0200
  • 1:$2.3800
IPB054N08N3GATMA1
DISTI # 2480800
Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3
RoHS: Compliant
0
  • 1000:$1.1800
  • 500:$1.4200
  • 100:$1.6100
  • 10:$2.0200
  • 1:$2.3800
IPB054N08N3GATMA1
DISTI # 2480800
Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-30
  • 500:£0.7180
  • 250:£0.7670
  • 100:£0.8160
  • 10:£1.0700
  • 1:£1.3800
Bild Teil # Beschreibung
STF26N60DM6

Mfr.#: STF26N60DM6

OMO.#: OMO-STF26N60DM6

MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM6 Power MOSFET in TO-220FP package
CRCW08051K00FKEAC

Mfr.#: CRCW08051K00FKEAC

OMO.#: OMO-CRCW08051K00FKEAC

Thick Film Resistors - SMD 1/8Watt 1Kohms 1% Commercial Use
CRCW080510R0FKEAC

Mfr.#: CRCW080510R0FKEAC

OMO.#: OMO-CRCW080510R0FKEAC

Thick Film Resistors - SMD 1/8Watt 10ohms 1% Commercial Use
CRCW0805220RFKEAC

Mfr.#: CRCW0805220RFKEAC

OMO.#: OMO-CRCW0805220RFKEAC-VISHAY-DALE

D12/CRCW0805-C 100 220R 1% ET1
CRCW080510R0FKEAC

Mfr.#: CRCW080510R0FKEAC

OMO.#: OMO-CRCW080510R0FKEAC-VISHAY-DALE

D12/CRCW0805-C 100 10R 1% ET1
CRCW08051K00FKEAC

Mfr.#: CRCW08051K00FKEAC

OMO.#: OMO-CRCW08051K00FKEAC-VISHAY-DALE

D12/CRCW0805-C 100 1K0 1% ET1
CRCW080510K0FKEAC

Mfr.#: CRCW080510K0FKEAC

OMO.#: OMO-CRCW080510K0FKEAC-VISHAY-DALE

D12/CRCW0805-C 100 10K 1% ET1
CRCW080510K0JNEAC

Mfr.#: CRCW080510K0JNEAC

OMO.#: OMO-CRCW080510K0JNEAC-VISHAY-DALE

D12/CRCW0805-C 200 10K 5% ET1
CRCW08050000Z0EAC

Mfr.#: CRCW08050000Z0EAC

OMO.#: OMO-CRCW08050000Z0EAC-VISHAY-DALE

D12/CRCW0805-C 0R0 ET1 E3
CRCW0805100KFKEAC

Mfr.#: CRCW0805100KFKEAC

OMO.#: OMO-CRCW0805100KFKEAC-VISHAY-DALE

D12/CRCW0805-C 100 100K 1% ET1
Verfügbarkeit
Aktie:
111
Auf Bestellung:
2094
Menge eingeben:
Der aktuelle Preis von IPB054N08N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,58 $
1,58 $
10
1,34 $
13,40 $
100
1,07 $
107,00 $
500
0,94 $
470,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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