S25FL512SAGBHVA10

S25FL512SAGBHVA10
Mfr. #:
S25FL512SAGBHVA10
Hersteller:
Cypress Semiconductor
Beschreibung:
NOR Flash Nor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S25FL512SAGBHVA10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
S25FL512SAGBHVA10 Mehr Informationen S25FL512SAGBHVA10 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
NOR-Blitz
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
BGA-24
Serie:
S25FL512S
Speichergröße:
512 Mbit
Maximale Taktfrequenz:
133 MHz
Oberflächentyp:
SPI
Organisation:
64 M x 8
Timing-Typ:
Asynchron
Datenbusbreite:
8 bit
Versorgungsspannung - Min.:
2.7 V
Versorgungsspannung - Max.:
3.6 V
Versorgungsstrom - Max.:
100 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 105 C
Verpackung:
Tablett
Speichertyp:
NOCH
Geschwindigkeit:
133 MHz
Die Architektur:
MirrorBit Eclipse
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
NOR-Blitz
Standard:
Common Flash-Schnittstelle (CFI)
Werkspackungsmenge:
338
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
SpiegelBit
Tags
S25FL512SAGBHV, S25FL512SAGBH, S25FL512SAGB, S25FL512SAG, S25FL512SA, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Serial NOR Flash Memory, 512 Mbit Density, FBGA-24, RoHS
***et
512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (S
***ark
Flash Memory, 512Mbit, -40 To 105Deg C; Flash Memory Type:serial Nor; Memory Size:512Mbit; Flash Memory Configuration:64M X 8Bit; Ic Interface Type:spi; Memory Case Style:bga; No. Of Pins:24Pins; Clock Frequency:133Mhz; Access Rohs Compliant: Yes
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Teil # Mfg. Beschreibung Aktie Preis
S25FL512SAGBHVA10
DISTI # 428-4181-ND
Cypress SemiconductorIC FLASH 512M SPI 133MHZ 24BGA
RoHS: Compliant
Min Qty: 1
Container: Tray
On Order
  • 1014:$6.3220
  • 676:$6.5515
  • 338:$6.8887
  • 100:$7.1041
  • 50:$7.9190
  • 25:$7.9472
  • 10:$8.1160
  • 1:$8.8200
S25FL512SAGBHVA10
DISTI # 51Y1258
Cypress SemiconductorTRAY PKGED / 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, BGA-FAB024 IN TRAY PACKING, RESET# + VIO0
  • 1:$10.0400
  • 10:$9.0100
  • 25:$8.2100
  • 50:$7.6800
  • 100:$7.1400
  • 250:$5.9800
  • 500:$5.8000
S25FL512SAGBHVA10
DISTI # 727-S25FL512SAGBHVA1
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
0
  • 1:$10.7100
  • 10:$9.8100
  • 25:$8.9200
  • 50:$8.5000
  • 100:$8.0300
  • 250:$7.4200
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Mfr.#: VCNL4020X01-GS08

OMO.#: OMO-VCNL4020X01-GS08

Proximity Sensors Proximity/IR Emitter AEC-Q101 Qualified
IS66WVH8M8ALL-166B1LI

Mfr.#: IS66WVH8M8ALL-166B1LI

OMO.#: OMO-IS66WVH8M8ALL-166B1LI-INTEGRATED-SILICON-SOLUTION

SRAM 64Mb 8Mbx8 1.8V 166MHz HyperRAM
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Mfr.#: TPS65400QRGZTQ1

OMO.#: OMO-TPS65400QRGZTQ1-TEXAS-INSTRUMENTS

IC REG BUCK ADJ 4A/2A QD 48VQFN
Verfügbarkeit
Aktie:
585
Auf Bestellung:
2568
Menge eingeben:
Der aktuelle Preis von S25FL512SAGBHVA10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
10,71 $
10,71 $
10
9,81 $
98,10 $
25
8,92 $
223,00 $
50
8,50 $
425,00 $
100
8,03 $
803,00 $
250
7,42 $
1 855,00 $
500
6,47 $
3 235,00 $
1000
6,02 $
6 020,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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