OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IRF3805PBF

IRF3805PBF
Mfr. #:
IRF3805PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 55V 220A 3.3mOhm 190nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF3805PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3805PBF DatasheetIRF3805PBF Datasheet (P4-P6)IRF3805PBF Datasheet (P7-P9)IRF3805PBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
220 A
Rds On - Drain-Source-Widerstand:
3.3 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
190 nC
Pd - Verlustleistung:
130 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001561690
Gewichtseinheit:
0.211644 oz
Tags
IRF3805, IRF38, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 55 V 3.3 mOhm 190 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 55V, 220A, 3.3 MOHM, 190 NC QG,TO-220AB
***ow.cn
Trans MOSFET N-CH Si 55V 210A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:210A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***emi
N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ
***ure Electronics
N-Channel 60 V 3.8 mOhm PowerTrench Mosfet TO-220AB
***et Europe
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:310W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ical
Trans MOSFET N-CH 40V 23A Automotive 3-Pin(3+Tab) TO-220AB Rail
***emi
N-Channel PowerTrench® MOSFET 40V, 80A, 2.7mΩ
***ure Electronics
N-Channel 40 V 2.7 mOhm PowerTrench® Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 23A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:80A; On Resistance, Rds(on):0.0047ohm; Rds(on) Test Voltage, Vgs:2.8V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:15000pF; Current Id Max:80A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.5°C/W; On State Resistance Max:4.7mohm; On State Resistance Typ:3.6mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.8Milliohms;ID 280A;TO-220AB;PD 330W;-55de
***eco
Transistor MOSFET N Channel 40 Volt 280.6 Amp 3 Pin 3+ Tab TO-220
*** Source Electronics
Trans MOSFET N-CH Si 40V 270A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 40V 75A TO-220AB
***klin Elektronik
INFINEON THT MOSFET NFET 40V 75A 2,3mΩ 175°C TO-220 IRF2804PBF
***ure Electronics
Single N-Channel 40 V 2.3 mOhm 240 nC HEXFET® Power Mosfet - TO-220-3
***ernational Rectifier
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 300 W
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ark
N CHANNEL MOSFET, 40V, 270A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:270A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 40V, 280A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:280A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:270A; Device Marking:IRF2804PBF; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:2.3ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:1080A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 3.9Milliohms;ID 175A;TO-220AB;PD 330W;-55de
*** Source Electronics
Trans MOSFET N-CH Si 55V 75A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 55V 75A TO-220AB
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 55 V 4.7 mOhm 230 nC HEXFET® Power Mosfet - TO-220-3
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 330 W
***el Electronic
Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 55V, 175A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:175A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.45°C/W; On State resistance @ Vgs = 10V:4.7ohm; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:700A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ler Electronic
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 55 V 4.9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ment14 APAC
MOSFET, N, 55V, 150A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:4.9ohm; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230W; Pulse Current Idm:600A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 150 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 4.9 / Gate-Source Voltage V = 20 / Fall Time ns = 82 / Rise Time ns = 110 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 230
***C
MOSFET N-CH 55V 75A TO-220AB MOSFET N-CH 55V 75A TO-220AB MOSFET N-CH 55V 75A TO-220AB
***ure Electronics
N-Channel 55 V 0.007 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
***emi
N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ
***r Electronics
Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:215W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:7mohm; Package / Case:TO-220AB; Power Dissipation Pd:215W; Power Dissipation Pd:215W; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Teil # Mfg. Beschreibung Aktie Preis
IRF3805PBF
DISTI # 29534081		Infineon Technologies AGTrans MOSFET N-CH Si 55V 210A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		10201
  • 100:$1.1424
  • 10:$1.8144
IRF3805PBF
DISTI # IRF3805PBF-ND		Infineon Technologies AGMOSFET N-CH 55V 75A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		131In Stock
  • 1000:$1.9173
  • 500:$2.2734
  • 100:$2.8075
  • 10:$3.4240
  • 1:$3.8300
IRF3805PBF
DISTI # C1S322000519969		Infineon Technologies AGTrans MOSFET N-CH Si 55V 210A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		10201
  • 1000:$1.3600
  • 500:$1.4700
  • 100:$1.9200
  • 50:$2.0900
  • 10:$2.5400
  • 1:$3.9200
IRF3805PBF
DISTI # IRF3805PBF		Infineon Technologies AGTrans MOSFET N-CH 55V 210A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3805PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 505
  • 1:$1.9900
  • 10:$1.8900
  • 25:$1.8900
  • 50:$1.8900
  • 100:$1.1900
  • 500:$1.1900
  • 1000:$1.1900
IRF3805PBF
DISTI # 91Y4729		Infineon Technologies AGMOSFET, N-CH, 55V, 210A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:210A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes967
  • 1:$3.3000
  • 10:$2.8100
  • 25:$2.6800
  • 50:$2.5600
  • 100:$2.4300
  • 250:$2.3100
  • 500:$2.0700
IRF3805PBF.
DISTI # 26AC0585		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:210A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$3.3000
  • 10:$2.8100
  • 25:$2.6800
  • 50:$2.5600
  • 100:$2.4300
  • 250:$2.3100
  • 500:$2.0700
IRF3805PBF
DISTI # 70018216		Infineon Technologies AGIRF3805PBF N-channel MOSFET Module,210A,55 V,3-Pin TO-220AB
RoHS: Compliant		0
  • 5:$4.7600
IRF3805PBF
DISTI # 942-IRF3805PBF		Infineon Technologies AGMOSFET MOSFT 55V 220A 3.3mOhm 190nC
RoHS: Compliant		1393
  • 1:$3.2900
  • 10:$2.8000
  • 100:$2.4200
  • 250:$2.3000
  • 500:$2.0600
IRF3805PBFInternational Rectifier 15
    IRF3805PBFInternational Rectifier 95
    • 2:$2.6880
    • 11:$1.7472
    • 30:$1.3440
    IRF3805PBFInternational RectifierMOSFET Transistor, N-Channel, TO-220AB76
    • 11:$1.8000
    • 4:$2.4000
    • 1:$3.6000
    IRF3805PBF
    DISTI # IRF3805PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,55V,220A,130W,TO220AB93
    • 1:$2.3500
    • 3:$2.1300
    • 10:$1.7600
    • 100:$1.5500
    IRF3805PBF
    DISTI # 2579974    		Infineon Technologies AGMOSFET, N-CH, 55V, 210A, TO-220AB-3
    RoHS: Compliant    		967
    • 1:£3.1500
    • 10:£2.1500
    • 100:£1.8500
    • 250:£1.7600
    • 500:£1.5800
    IRF3805PBF
    DISTI # 2579974    		Infineon Technologies AGMOSFET, N-CH, 55V, 210A, TO-220AB-3
    RoHS: Compliant    		967
    • 1:$5.2100
    • 10:$4.4400
    • 100:$3.8400
    • 250:$3.6500
    • 500:$3.2600
    • 1000:$2.7600
    Bild Teil # Beschreibung
    SMF3.3

    Mfr.#: SMF3.3

    OMO.#: OMO-SMF3-3

    		 TVS Diodes / ESD Suppressors 200W 3.3V 5% Uni-directional
    687110183622

    Mfr.#: 687110183622

    OMO.#: OMO-687110183622

    		 FFC & FPC Connectors WR-FPC SMT Horiztl .50mm Top Cont 10P
    1862042

    Mfr.#: 1862042

    OMO.#: OMO-1862042

    		 Fixed Terminal Blocks SPTAF 1/ 2-3,5-EL
    XBP24CAUIT-001

    Mfr.#: XBP24CAUIT-001

    OMO.#: OMO-XBP24CAUIT-001

    		 Zigbee Modules (802.15.4) XBee-PRO, S2C 2.4GHz Through-hole, U.FL
    SMF3.3

    Mfr.#: SMF3.3

    OMO.#: OMO-SMF3-3-1190

    		 Surface mount TVS diode
    SR6ZB024

    Mfr.#: SR6ZB024

    OMO.#: OMO-SR6ZB024-635

    		 Safety Relays 4PST-NO/DPST-NC 8A 24VDC SAFETY RELAY
    SPS30

    Mfr.#: SPS30

    OMO.#: OMO-SPS30-SENSIRION

    		 PM2.5 PARTICLE SENSOR
    104031-0811

    Mfr.#: 104031-0811

    OMO.#: OMO-104031-0811-404

    		 Memory Connectors Memory Card Connectors MICRO SD PUSH-PULL SMT 1.42MM HEIGHT
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von IRF3805PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,29 $
    3,29 $
    10
    2,80 $
    28,00 $
    100
    2,42 $
    242,00 $
    250
    2,30 $
    575,00 $
    500
    2,06 $
    1 030,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    • AFE2000 Series Active Front-End
      AFE2000 Series Active Front-End
      Delta's AFE2000 series AFE replaces a traditional braking resistor by converting excess heat into reusable power that can be supplied back to the mains.
    • TurboFan DC Series
      TurboFan DC Series
      Built with an integral stationary blade, a single rotor, and an aerodynamic casing these fans are designed for high pressure performance while being efficient.
    • ASDA-B2 Series AC Servo Drive and Motor
      ASDA-B2 Series AC Servo Drive and Motor
      Delta's ASDA-B2 series servo motors and drives meet the requirements for general-purpose machine control applications.
    • IR1 Series Single Gas Sensors
      IR1 Series Single Gas Sensors
      Amphenol SGX Sensortech's IR1 series sensors monitor gas levels in general safety applications requiring a flameproof enclosure and where the sensor size is restricted.
    • Compare IRF3805PBF
      Compare IRF3805PBF
      IRF3805 vs IRF3805L7PPBF vs IRF3805LPBF
    • Unmanaged Industrial Ethernet Switches
      Unmanaged Industrial Ethernet Switches
      Delta’s unmanaged industrial Ethernet switches provide a reliable network in harsh environments and can establish stable connections in extreme temperatures.
    More Newest Products
    Top