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IPP60R600P7XKSA1

IPP60R600P7XKSA1
Mfr. #:
IPP60R600P7XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP60R600P7XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
6 A
Rds On - Drain-Source-Widerstand:
490 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
9 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
30 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Serie:
CoolMOS P7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
19 ns
Produktart:
MOSFET
Anstiegszeit:
6 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
37 ns
Typische Einschaltverzögerungszeit:
7 ns
Teil # Aliase:
IPP60R600P7 SP001606032
Gewichtseinheit:
0.063493 oz
Tags
IPP60R6, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 600 mOhm 9 nC CoolMOS™ Power Mosfet - TO-220-3
***ark
Mosfet, N-Ch, 600V, 6A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
Teil # Mfg. Beschreibung Aktie Preis
IPP60R600P7XKSA1
DISTI # V99:2348_17076888		Infineon Technologies AGTrans MOSFET N-CH 600V 6A Tube188
  • 1000:$0.6669
  • 500:$0.8305
  • 100:$0.9527
  • 10:$1.2310
  • 1:$1.5800
IPP60R600P7XKSA1
DISTI # IPP60R600P7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 6A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		479In Stock
  • 5000:$0.6210
  • 2500:$0.6537
  • 500:$0.8872
  • 100:$1.0740
  • 25:$1.3076
  • 10:$1.3770
  • 1:$1.5400
IPP60R600P7XKSA1
DISTI # 32925524		Infineon Technologies AGTrans MOSFET N-CH 600V 6A Tube1000
  • 500:$0.5569
IPP60R600P7XKSA1
DISTI # 26198599		Infineon Technologies AGTrans MOSFET N-CH 600V 6A Tube188
  • 1000:$0.6669
  • 500:$0.8305
  • 100:$0.9527
  • 10:$1.2310
IPP60R600P7XKSA1
DISTI # SP001606032		Infineon Technologies AGLOW POWER_NEW (Alt: SP001606032)
RoHS: Compliant
Min Qty: 50		Europe - 490
  • 500:€0.5289
  • 300:€0.5689
  • 200:€0.6169
  • 100:€0.6729
  • 50:€0.8219
IPP60R600P7XKSA1
DISTI # IPP60R600P7XKSA1		Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPP60R600P7XKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.5649
  • 5000:$0.5749
  • 3000:$0.5949
  • 2000:$0.6169
  • 1000:$0.6399
IPP60R600P7XKSA1
DISTI # 34AC1715		Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power Dissipation RoHS Compliant: Yes170
  • 1000:$0.6750
  • 500:$0.8530
  • 100:$0.9670
  • 10:$1.2500
  • 1:$1.4600
IPP60R600P7XKSA1
DISTI # 726-IPP60R600P7XKSA1		Infineon Technologies AGMOSFET
RoHS: Compliant		1219
  • 1:$1.4500
  • 10:$1.2400
  • 100:$0.9570
  • 500:$0.8450
  • 1000:$0.6680
IPP60R600P7XKSA1
DISTI # 2784033		Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220150
  • 500:£0.6450
  • 250:£0.6880
  • 100:£0.7300
  • 10:£0.9970
  • 1:£1.2600
IPP60R600P7XKSA1
DISTI # 2784033		Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220
RoHS: Compliant		170
  • 5000:$0.9080
  • 1000:$0.9560
  • 500:$1.0200
  • 250:$1.1700
  • 100:$1.3900
  • 25:$1.7100
  • 5:$1.9500
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Mfr.#: HRG3216P-1000-B-T1

OMO.#: OMO-HRG3216P-1000-B-T1-SUSUMU

 RES SMD 100 OHM 0.1% 1W 1206
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Mfr.#: NUCLEO-F767ZI

OMO.#: OMO-NUCLEO-F767ZI-STMICROELECTRONICS

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BSC0504NSIATMA1

Mfr.#: BSC0504NSIATMA1

OMO.#: OMO-BSC0504NSIATMA1-INFINEON-TECHNOLOGIES

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Mfr.#: CRF1206-FZ-R010ELF

OMO.#: OMO-CRF1206-FZ-R010ELF-BOURNS

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von IPP60R600P7XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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