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FDP3632

FDP3632
Mfr. #:
FDP3632
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 100V 80a .9 Ohms/VGS=1V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDP3632 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
7.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
310 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FDP3632
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
46 ns
Produktart:
MOSFET
Anstiegszeit:
39 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
96 ns
Typische Einschaltverzögerungszeit:
30 ns
Teil # Aliase:
FDP3632_NL
Gewichtseinheit:
0.063493 oz
Tags
FDP363, FDP36, FDP3, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***eco
Transistor MOSFET Negative Channel 100 Volt 12A 3-Pin(3+Tab) TO-220AB Tube
***Semiconductor
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ. Recommended replacement is FDP090N10
***p One Stop Japan
Trans MOSFET N-CH 100V 12A Automotive 3-Pin(3+Tab) TO-220AB Tube
***ical
Trans MOSFET N-CH 100V 12A 3-Pin (3+Tab) TO-220AB Tube
***et Europe
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 100 V 9 mOhm PowerTrench Mosfet - TO-220AB
***et
TO-220AB, SINGLE, N-CH, 100V, 9 MOHM PWR ULTRAFET TRENCH MOS
*** Source Electronics
MOSFET N-CH 100V 80A TO-220AB
***ark
Fet 100V 9.0 Mohm To220 Rohs Compliant: Yes
***ser
MOSFETs 100V, 80a .9 Ohms/VGS=1V
***Components
MOSFET Transistor
***ment14 APAC
N CH MOSFET, 100V, 80A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:820A; SMD Marking:FDP3632; Voltage Vgs Max:4V
Teil # Mfg. Beschreibung Aktie Preis
FDP3632
DISTI # FDP3632-ND		ON SemiconductorMOSFET N-CH 100V 80A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		2208In Stock
  • 1600:$1.7245
  • 800:$1.8409
  • 100:$2.4810
  • 10:$3.0050
  • 1:$3.3600
FDP3632
DISTI # FDP3632		ON SemiconductorTrans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP3632)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1400
  • 1:$1.1900
  • 10:$1.0900
  • 25:$1.0900
  • 50:$1.0900
  • 100:$1.0900
  • 500:$1.0900
  • 1000:$1.0900
FDP3632Fairchild Semiconductor CorporationPower Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		9511
  • 1000:$1.3800
  • 500:$1.4500
  • 100:$1.5100
  • 25:$1.5800
  • 1:$1.7000
FDP3632
DISTI # 512-FDP3632		ON SemiconductorMOSFET 100V 80a .9 Ohms/VGS=1V
RoHS: Compliant		1048
  • 1:$2.8100
  • 10:$2.3900
  • 100:$2.0700
  • 250:$1.9600
  • 500:$1.7600
FDP3632_Q
DISTI # 512-FDP3632_Q		ON SemiconductorMOSFET 100V 80a .9 Ohms/VGS=1V
RoHS: Not compliant		0
    FDP3632Fairchild Semiconductor Corporation 22
      FDP3632
      DISTI # 6714828P      		ON SemiconductorMOSFET N-CHANNEL 100V 12A TO220AB, TU12
      • 10:£2.1500
      • 20:£1.9400
      FDP3632
      DISTI # FDP3632      		ON SemiconductorTransistor: N-MOSFET,unipolar,100V,12A,310W,TO220AB68
      • 1:$3.9800
      • 3:$3.4100
      • 10:$2.7400
      • 25:$2.4700
      FDP3632Fairchild Semiconductor CorporationPower Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Not Compliant      		Europe - 100
        FDP3632
        DISTI # 1095015        		ON Semiconductor 
        RoHS: Compliant        		0
        • 500:$2.7900
        • 250:$3.1000
        • 100:$3.2800
        • 10:$3.7800
        • 1:$4.4500
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        Verfügbarkeit
        Aktie:
        851
        Auf Bestellung:
        2834
        Menge eingeben:
        Der aktuelle Preis von FDP3632 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        2,92 $
        2,92 $
        10
        2,48 $
        24,80 $
        100
        2,15 $
        215,00 $
        250
        2,04 $
        510,00 $
        500
        1,83 $
        915,00 $
        1000
        1,58 $
        1 580,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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