SIDR626DP-T1-GE3

Mfr. #:: SIDR626DP-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIDR626DP-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIDR626DP-T1-GE3 Datasheet SIDR626DP-T1-GE3 Datasheet (P4-P6)SIDR626DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:: SIDR626DP-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PowerPAK-SO-8DC-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 60 V

Id - Kontinuierlicher Drainstrom:: 100 A

Rds On - Drain-Source-Widerstand:: 1.7 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 68 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 125 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Serie:: SID

Transistortyp:: 1 N-Channel

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 78 S

Abfallzeit:: 11 ns

Produktart:: MOSFET

Anstiegszeit:: 24 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 30 ns

Typische Einschaltverzögerungszeit:: 16 ns

Tags: SIDR62, SIDR6, SIDR, SID

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIDR626DP-T1-GE3 Mehr Informationen

TrenchFET® Gen IV Top-Side Double Cooling MOSFETs: Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIDR626DP-T1-GE3 DISTI # V72:2272_21764850	Vishay Intertechnologies	SIDR626DP-T1-GE3	2884	75000:$1.2210 30000:$1.2250 15000:$1.2300 6000:$1.2340 3000:$1.2389 1000:$1.4620 500:$1.5750 250:$1.6400 100:$1.8220 50:$1.9070 25:$2.1189 10:$2.3540 1:$3.1064
SIDR626DP-T1-GE3 DISTI # SIDR626DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CHAN 60V RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5659In Stock	1000:$1.4396 500:$1.7374 100:$2.1147 10:$2.6310 1:$2.9300
SIDR626DP-T1-GE3 DISTI # SIDR626DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CHAN 60V RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5659In Stock	1000:$1.4396 500:$1.7374 100:$2.1147 10:$2.6310 1:$2.9300
SIDR626DP-T1-GE3 DISTI # SIDR626DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CHAN 60V RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	6000:$1.2852 3000:$1.3013
SIDR626DP-T1-GE3 DISTI # 31012431	Vishay Intertechnologies	SIDR626DP-T1-GE3	2884	1000:$1.3280 500:$1.5750 250:$1.6400 100:$1.8220 50:$1.9070 25:$2.1189 10:$2.3540 6:$3.1064
SIDR626DP-T1-GE3 DISTI # SIDR626DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 100A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIDR626DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$1.0900 12000:$1.1900 18000:$1.1900 30000:$1.1900 6000:$1.2900
SIDR626DP-T1-GE3 DISTI # 59AC7338	Vishay Intertechnologies	N-CHANNEL 60-V (D-S) MOSFET	0	10000:$1.1500 6000:$1.2000 4000:$1.2400 2000:$1.3800 1000:$1.4500 1:$1.5500
SIDR626DP-T1-GE3 DISTI # 78AC6503	Vishay Intertechnologies	MOSFET, N-CH, 60V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.4V,Power RoHS Compliant: Yes	5840	500:$1.6200 250:$1.7300 100:$1.8500 50:$2.0300 25:$2.2100 10:$2.3900 1:$2.8800
SIDR626DP-T1-GE3 DISTI # 78-SIDR626DP-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC RoHS: Compliant	5635	1:$2.8500 10:$2.3700 100:$1.8300 500:$1.6000 1000:$1.3300 3000:$1.2400 6000:$1.1900
SIDR626DP-T1-GE3 DISTI # 2932898	Vishay Intertechnologies	MOSFET, N-CH, 60V, 100A, 150DEG C, 125W RoHS: Compliant	5840	1000:$2.7900 500:$2.9400 250:$3.1300 100:$3.4100 10:$3.9300 1:$4.5100
SIDR626DP-T1-GE3 DISTI # 2932898	Vishay Intertechnologies	MOSFET, N-CH, 60V, 100A, 150DEG C, 125W	5840	500:£1.2500 250:£1.2900 100:£1.3400 10:£1.7400 1:£2.3600

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von SIDR626DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,85 $~~; ~~2,85 $~~

10: ~~2,37 $~~; ~~23,70 $~~

100: ~~1,83 $~~; ~~183,00 $~~

500: ~~1,60 $~~; ~~800,00 $~~

1000: ~~1,33 $~~; ~~1 330,00 $~~

Beginnen mit

SIDR62 3
SIDR6 8
SIDR 16
SID 415

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SIDR626DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes