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FCP190N60-GF102

FCP190N60-GF102
Mfr. #:
FCP190N60-GF102
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 20.2A 600V MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCP190N60-GF102 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FCP190N60-GF102 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
20.2 A
Rds On - Drain-Source-Widerstand:
170 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V, 30 V
Qg - Gate-Ladung:
57 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
208 W
Aufbau:
Single
Handelsname:
SuperFET II
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FCP190N60_GF102
Transistortyp:
1 N-Channel
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
21 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
64 ns
Typische Einschaltverzögerungszeit:
20 ns
Teil # Aliase:
FCP190N60_GF102
Gewichtseinheit:
0.063493 oz
Tags
FCP190N60, FCP190, FCP19, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FCP190N60_GF102
DISTI # V36:1790_06359554		ON SemiconductorSUPERFET2, 190MOHM, TO220, F100
  • 800000:$1.1010
  • 400000:$1.1030
  • 80000:$1.2930
  • 8000:$1.6160
  • 800:$1.6690
FCP190N60-GF102
DISTI # FCP190N60-GF102-ND		ON SemiconductorMOSFET N-CH 600V TO-220-3
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.6694
FCP190N60_GF102
DISTI # FCP190N60-GF102		ON SemiconductorTrans MOSFET N-CH 600V 20.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: FCP190N60-GF102)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 400
  • 2400:$1.0900
  • 4000:$1.0900
  • 8000:$1.0900
  • 800:$1.1900
  • 1600:$1.1900
FCP190N60_GF102
DISTI # FCP190N60-GF102		ON SemiconductorTrans MOSFET N-CH 600V 20.2A 3-Pin TO-220 Tube - Bulk (Alt: FCP190N60-GF102)
Min Qty: 232
Container: Bulk		Americas - 0
  • 696:$1.2900
  • 1160:$1.2900
  • 2320:$1.2900
  • 232:$1.3900
  • 464:$1.3900
FCP190N60-GF102
DISTI # 48AC0859		ON SemiconductorSF2 600V 190MOHM F TO220 / TUBE0
  • 1000:$1.7400
  • 500:$1.8400
  • 250:$1.9800
  • 100:$2.1500
  • 1:$2.6200
FCP190N60-GF102.
DISTI # 98AC1349		ON SemiconductorSF2 600V 190MOHM F TO220 ROHS COMPLIANT: YES400
  • 1000:$1.7400
  • 500:$1.8400
  • 250:$1.9800
  • 100:$2.1500
  • 1:$2.6200
FCP190N60-GF102
DISTI # 512-FCP190N60_GF102		ON SemiconductorMOSFET 20.2A 600V MOSFET
RoHS: Compliant		598
  • 1:$2.6700
  • 10:$2.2700
  • 100:$1.8100
  • 500:$1.5800
  • 1000:$1.3100
  • 2500:$1.2200
  • 5000:$1.1800
FCP190N60-GF102Fairchild Semiconductor Corporation 
RoHS: Not Compliant		653
  • 1000:$1.3300
  • 500:$1.4000
  • 100:$1.4600
  • 25:$1.5200
  • 1:$1.6400
FCP190N60_GF102
DISTI # 8647900P		ON SemiconductorMOSFET N-CH 600V 20.2A SUPERFET II TO220, TU17
  • 200:£1.4400
  • 100:£1.5050
  • 40:£1.6150
  • 10:£1.8450
Bild Teil # Beschreibung
FDN360P

Mfr.#: FDN360P

OMO.#: OMO-FDN360P

 MOSFET SSOT-3 P-CH -30V
MBR10100G

Mfr.#: MBR10100G

OMO.#: OMO-MBR10100G

 Schottky Diodes & Rectifiers 10A 100V
106RSS035M

Mfr.#: 106RSS035M

OMO.#: OMO-106RSS035M

 Aluminum Electrolytic Capacitors - Radial Leaded 10uF 35V 20%
299-2K-RC

Mfr.#: 299-2K-RC

OMO.#: OMO-299-2K-RC-1087

 Carbon Film Resistors - Through Hole 2Kohms 0.05
106RSS035M

Mfr.#: 106RSS035M

OMO.#: OMO-106RSS035M-ILLINOIS-CAPACITOR

 Aluminum Electrolytic Capacitors - Leaded 10uF 35V 20%
FDN360P

Mfr.#: FDN360P

OMO.#: OMO-FDN360P-ON-SEMICONDUCTOR

 MOSFET P-CH 30V 2A SSOT3
MBR10100G

Mfr.#: MBR10100G

OMO.#: OMO-MBR10100G-ON-SEMICONDUCTOR

 Schottky Diodes & Rectifiers 10A 100V
39213150000

Mfr.#: 39213150000

OMO.#: OMO-39213150000-LITTELFUSE

 Fuses with Leads (Through Hole) 250V IEC TL LL 3.15A TE5
Verfügbarkeit
Aktie:
598
Auf Bestellung:
2581
Menge eingeben:
Der aktuelle Preis von FCP190N60-GF102 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,67 $
2,67 $
10
2,27 $
22,70 $
100
1,81 $
181,00 $
500
1,58 $
790,00 $
1000
1,31 $
1 310,00 $
2500
1,22 $
3 050,00 $
5000
1,18 $
5 900,00 $
10000
1,13 $
11 300,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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