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IRF200B211

IRF200B211
Mfr. #:
IRF200B211
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET TRENCH_MOSFETS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF200B211 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRF200B211 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
170 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
15.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
80 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
StarkIRFET
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
13 S
Abfallzeit:
6.5 ns
Produktart:
MOSFET
Anstiegszeit:
9.5 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
11.3 ns
Typische Einschaltverzögerungszeit:
6.5 ns
Teil # Aliase:
SP001561622
Gewichtseinheit:
0.081130 oz
Tags
IRF200, IRF20, IRF2, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 170 mOhm 15.3 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ow.cn
Trans MOSFET N-CH Si 200V 12A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N-CH, 200V, 12A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V;
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant, Halogen-Free
***et
TRANS MOSFET N-CH 150V 16.4A 3PIN TO-220F
***ser
MOSFETs 150V N-Channel QFET
***el Nordic
Contact for details
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 9.5 A, 360 mΩ, TO-220F
***ure Electronics
Single N-Channel 200 V 0.36 Ohm 26 nC 38 W DMOS Flange Mount Mosfet - TO-220F
***ow.cn
Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 200V, 9.5A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.5A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.29o; Available until stocks are exhausted Alternative available
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, P-Channel, QFET®, -200 V, -5.2 A, 690 mΩ, TO-220F
***Yang
Trans MOSFET P-CH 200V 5.2A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***ark
Mosfet, P-Ch, 200V, 5A, 150Deg C, 45W Rohs Compliant: Yes |Onsemi FQPF7P20
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***et
Trans MOSFET N-CH 200V 5.5A 3-Pin TO-220 Tube
***nsix Microsemi
5.5A I(D) 200V 0.6ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET
***i-Key
MOSFET N-CH 200V 5.5A TO220-3
*** Electronics
N-CHANNEL POWER MOSFET
***i-Key
MOSFET N-CH 200V 6.8A TO-220F
***el Electronic
IC OPAMP GP 1 CIRCUIT 5SSOP
***ark
MOSFET, N, TO-220F; Transistor type:MOSFET; Current, Id cont:6.8A; Resistance, Rds on:0.36R; Case style:TO-220F; Current, Idm pulse:27.2A; Pins, No. of:3; Power dissipation:40W; Power, Pd:40W; Transistor polarity:N; Voltage, Vds RoHS Compliant: Yes
***Yang
P-Channel 200V 7.3A (Tc) 90W (Tc) Through Hole TO-220-3 - Bulk
***i-Key Marketplace
MOSFET P-CH 200V 7.3A TO220-3
***ser
MOSFETs 200V P-Channel QFET
***el Nordic
Contact for details
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF200B211
DISTI # V99:2348_13890889		Infineon Technologies AGTrans MOSFET N-CH Si 200V 12A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1762
  • 2000:$0.2957
  • 1000:$0.3149
  • 500:$0.3499
  • 100:$0.5923
  • 10:$0.7519
  • 1:$0.8717
IRF200B211
DISTI # IRF200B211-ND		Infineon Technologies AGMOSFET N-CH 200V 12A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		2743In Stock
  • 1000:$0.4950
  • 500:$0.6270
  • 100:$0.8085
  • 10:$1.0230
  • 1:$1.1600
IRF200B211
DISTI # 30675815		Infineon Technologies AGTrans MOSFET N-CH Si 200V 12A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		3000
  • 2500:$0.3744
  • 1250:$0.4128
  • 500:$0.4416
  • 250:$0.4656
  • 50:$0.5280
IRF200B211
DISTI # 26198204		Infineon Technologies AGTrans MOSFET N-CH Si 200V 12A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1762
  • 1000:$0.3150
  • 500:$0.3500
  • 100:$0.5923
  • 19:$0.7519
IRF200B211
DISTI # IRF200B211		Infineon Technologies AGTrans MOSFET N-CH 200V 12A 3-Pin TO-220 Tube - Rail/Tube (Alt: IRF200B211)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.3449
  • 5000:$0.3329
  • 8000:$0.3209
  • 15000:$0.3099
  • 30000:$0.3039
IRF200B211
DISTI # 12AC9749		Infineon Technologies AGMOSFET, N-CH, 200V, 12A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.9V,Power RoHS Compliant: Yes2592
  • 1:$1.0500
  • 10:$0.9000
  • 100:$0.7090
  • 500:$0.6350
  • 1000:$0.5160
  • 2500:$0.4650
  • 10000:$0.4520
IRF200B211
DISTI # 942-IRF200B211		Infineon Technologies AGMOSFET TRENCH_MOSFETS
RoHS: Compliant		3910
  • 1:$0.9900
  • 10:$0.8400
  • 100:$0.6460
  • 500:$0.5710
  • 1000:$0.4500
  • 2000:$0.3990
IRF200B211Infineon Technologies AGSingle N-Channel 200 V 170 mOhm 15.3 nC HEXFET Power Mosfet - TO-220-3
RoHS: Compliant		50Tube
  • 50:$0.7200
  • 250:$0.4600
  • 500:$0.4350
  • 1250:$0.4000
  • 2500:$0.3800
IRF200B211Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant		689
  • 1000:$0.4000
  • 500:$0.4200
  • 100:$0.4300
  • 25:$0.4500
  • 1:$0.4900
IRF200B211International RectifierPower Field-Effect Transistor
RoHS: Compliant		4950
  • 1000:$0.4000
  • 500:$0.4200
  • 100:$0.4300
  • 25:$0.4500
  • 1:$0.4900
IRF200B211
DISTI # C1S322000590122		Infineon Technologies AGMOSFETs
RoHS: Compliant		3000
  • 3000:$0.4920
IRF200B211
DISTI # 2709978		Infineon Technologies AGMOSFET, N-CH, 200V, 12A, TO-220AB
RoHS: Compliant		2582
  • 1:$1.8500
  • 10:$1.6400
  • 100:$1.2900
  • 500:$1.0000
  • 1000:$0.7890
IRF200B211
DISTI # 2709978		Infineon Technologies AGMOSFET, N-CH, 200V, 12A, TO-220AB
RoHS: Compliant		2597
  • 5:£0.6410
  • 25:£0.5670
  • 100:£0.4930
  • 250:£0.4640
  • 500:£0.4350
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von IRF200B211 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,98 $
0,98 $
10
0,84 $
8,40 $
100
0,65 $
64,60 $
500
0,57 $
285,50 $
1000
0,45 $
450,00 $
2000
0,40 $
798,00 $
10000
0,38 $
3 850,00 $
25000
0,37 $
9 300,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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