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SCT2750NYTB

SCT2750NYTB
Mfr. #:
SCT2750NYTB
Hersteller:
Rohm Semiconductor
Beschreibung:
1700V .75 OHM 6A SIC FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SCT2750NYTB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SCT2750NYTB Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 1700 V 0.75 Ohm Surface Mount SiC Power Mosfet - TO-268-2
***et
MOSFET, Power, N-Channel, SiC, 1700Vdc, 0.75 Ohm, 6A, TO-268-2l Pkg (15.95x13.9x5.0mm), 13T&R 800"
***ical
Trans MOSFET N-CH SiC 1.7KV 5.9A 3-Pin(2+Tab) TO-268L T/R
***Components
MOSFET N-CH 1700V 6A SIC TO-268-2L
***ronik
SiC-N 1700V 750mOhm 6A TO268
***ark
1700V, .75 OHM 6A SIC FET
***i-Key
1700V .75 OHM 6A SIC FET
***
N-CH SIC PWR MOSF 1.7KV
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 1.7KV, 6A, TO-268; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):0.75ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:57W; Transistor Case Style:TO-268; No. of Pins:2Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 1,7KV, 6A, TO-268; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:1.7kV; Resistenza di Attivazione Rds(on):0.75ohm; Tensione Vgs di Misura Rds(on):18V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:57W; Modello Case Transistor:TO-268; No. di Pin:2Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Electronic Vehicle (EV) Solutions
ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.
Teil # Mfg. Beschreibung Aktie Preis
SCT2750NYTB
DISTI # 33952740		ROHM Semiconductor0800
  • 4:$7.1375
SCT2750NYTB
DISTI # SCT2750NYTBCT-ND		ROHM Semiconductor1700V .75 OHM 6A SIC FET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1783In Stock
  • 100:$4.6798
  • 25:$5.3996
  • 10:$5.7120
  • 1:$6.3600
SCT2750NYTB
DISTI # SCT2750NYTBDKR-ND		ROHM Semiconductor1700V .75 OHM 6A SIC FET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1783In Stock
  • 100:$4.6798
  • 25:$5.3996
  • 10:$5.7120
  • 1:$6.3600
SCT2750NYTB
DISTI # SCT2750NYTBTR-ND		ROHM Semiconductor1700V .75 OHM 6A SIC FET
RoHS: Compliant
Min Qty: 400
Container: Tape & Reel (TR)		1600In Stock
  • 2000:$3.0989
  • 1200:$3.2620
  • 800:$3.8678
  • 400:$4.3105
SCT2750NYTB
DISTI # C1S625901693423		ROHM SemiconductorMOSFETs800
  • 500:$3.0100
  • 200:$3.4200
  • 50:$3.6500
  • 10:$4.8600
  • 1:$5.7100
SCT2750NYTB
DISTI # SCT2750NYTB		ROHM SemiconductorMOSFET, Power, N-Channel, SiC, 1700Vdc, 0.75 Ohm,6A, TO-268-2l Pkg (15.95x13.9x5.0mm), 13"T&R 800 - Tape and Reel (Alt: SCT2750NYTB)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 800
    SCT2750NYTB
    DISTI # SCT2750NYTB    		ROHM SemiconductorMOSFET, Power, N-Channel, SiC, 1700Vdc, 0.75 Ohm,6A, TO-268-2l Pkg (15.95x13.9x5.0mm), 13"T&R 800 (Alt: SCT2750NYTB)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel    		Europe - 0
    • 8000:€3.8900
    • 4800:€4.1900
    • 3200:€4.4900
    • 1600:€4.6900
    • 800:€4.8900
    SCT2750NYTB
    DISTI # 28AC1982    		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 6A, TO-268,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):0.75ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes786
    • 250:$4.3900
    • 100:$4.6200
    • 50:$4.8600
    • 25:$5.1600
    • 10:$5.3900
    • 1:$6.2200
    SCT2750NYTB
    DISTI # 755-SCT2750NYTB    		ROHM SemiconductorMOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide
    RoHS: Compliant    		1384
    • 1:$6.1600
    • 10:$5.2400
    • 100:$4.5400
    • 250:$4.3100
    • 400:$3.8600
    • 800:$3.2600
    • 2400:$3.0900
    SCT2750NYTBROHM Semiconductor 1
    • 2:$8.0750
    • 1:$9.6900
    SCT2750NYTB
    DISTI # TMOS1871    		ROHM SemiconductorSiC-N 1700V 750mOhm 6A TO268
    RoHS: Compliant    		Stock DE - 800Stock HK - 0Stock US - 0
    • 800:$6.6400
    SCT2750NYTB
    DISTI # 2772413    		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 6A, TO-268
    RoHS: Compliant    		782
    • 25:$8.1400
    • 10:$8.6100
    • 1:$9.5800
    SCT2750NYTBROHM SemiconductorMOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide
    RoHS: Compliant    		Americas - 1600
      SCT2750NYTB
      DISTI # 2772413      		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 6A, TO-268789
      • 100:£3.7300
      • 50:£3.8700
      • 10:£4.0000
      • 5:£4.7000
      • 1:£5.1800
      SCT2750NYTBROHM SemiconductorRoHS(ship within 1day)2
      • 1:$6.3700
      • 10:$4.7800
      • 50:$4.2100
      • 100:$3.6000
      • 500:$3.3400
      • 1000:$3.2300
      Bild Teil # Beschreibung
      SCT2750NYTB

      Mfr.#: SCT2750NYTB

      OMO.#: OMO-SCT2750NYTB

      		 MOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide
      SCT2750NYTB

      Mfr.#: SCT2750NYTB

      OMO.#: OMO-SCT2750NYTB-ROHM-SEMI

      		 1700V .75 OHM 6A SIC FET
      SCT277-1

      Mfr.#: SCT277-1

      OMO.#: OMO-SCT277-1-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von SCT2750NYTB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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