PTFB192503ELV1R0XTMA1

PTFB192503ELV1R0XTMA1
Mfr. #:
PTFB192503ELV1R0XTMA1
Hersteller:
Infineon Technologies AG
Beschreibung:
RF MOSFET Transistors
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PTFB192503ELV1R0XTMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
PTFB192503E, PTFB19250, PTFB192, PTFB19, PTFB1, PTFB, PTF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
LDMOS FET, High Power RF, 240W, 1.93-1.99GHz, H-33288-6 Pkg, T/R 50
***i-Key
IC AMP RF LDMOS H-33288-6
***ineon
High Power RF LDMOS FET, 240 W, 30 V, 1930 1990 MHz | Summary of Features: Broadband input and output matching; Enhanced for use in DPD error correction systems; Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output power = 50 W - Linear Gain = 19 dB - Efficiency = 28% - IMD = -35 dBc; Typical CW performance, 1990 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 55%; Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers; Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power; Integrated ESD protection. Human Body Model, Class 2 (minimum); Pb-free and RoHS compliant; Package: H-33288-6, bolt-down
Teil # Mfg. Beschreibung Aktie Preis
PTFB192503ELV1R0XTMA1
DISTI # 726-PTFB192503ELV1R0
Infineon Technologies AGRF MOSFET Transistors
RoHS: Compliant
0
    Bild Teil # Beschreibung
    PTFB192503FL-V2-R250

    Mfr.#: PTFB192503FL-V2-R250

    OMO.#: OMO-PTFB192503FL-V2-R250

    RF MOSFET Transistors RF LDMOS FET
    PTFB192503EL-V1-R0

    Mfr.#: PTFB192503EL-V1-R0

    OMO.#: OMO-PTFB192503EL-V1-R0-WOLFSPEED

    IC AMP RF LDMOS H-33288-6
    PTFB192503EL-V1-R250

    Mfr.#: PTFB192503EL-V1-R250

    OMO.#: OMO-PTFB192503EL-V1-R250-WOLFSPEED

    IC AMP RF LDMOS
    PTFB192503FL-V2-R0

    Mfr.#: PTFB192503FL-V2-R0

    OMO.#: OMO-PTFB192503FL-V2-R0-WOLFSPEED

    IC AMP RF LDMOS H-34288-4
    PTFB192503FL-V2-R250

    Mfr.#: PTFB192503FL-V2-R250

    OMO.#: OMO-PTFB192503FL-V2-R250-WOLFSPEED

    IC AMP RF LDMOS
    PTFB192503ELV1R0XTMA1

    Mfr.#: PTFB192503ELV1R0XTMA1

    OMO.#: OMO-PTFB192503ELV1R0XTMA1-319

    RF MOSFET Transistors
    PTFB192503FLV2R0XTMA1

    Mfr.#: PTFB192503FLV2R0XTMA1

    OMO.#: OMO-PTFB192503FLV2R0XTMA1-319

    RF MOSFET Transistors RFP-LDMOS 9
    PTFB192503EL

    Mfr.#: PTFB192503EL

    OMO.#: OMO-PTFB192503EL-1190

    Neu und Original
    PTFB192503FL

    Mfr.#: PTFB192503FL

    OMO.#: OMO-PTFB192503FL-1190

    Neu und Original
    PTFB192503FL S250

    Mfr.#: PTFB192503FL S250

    OMO.#: OMO-PTFB192503FL-S250-1190

    Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von PTFB192503ELV1R0XTMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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