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IRGSL4B60KD1PBF

IRGSL4B60KD1PBF
Mfr. #:
IRGSL4B60KD1PBF
Hersteller:
Infineon / IR
Beschreibung:
IGBT Transistors 600V Low-Vceon Non Punch Through
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRGSL4B60KD1PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGSL4B60KD1PBF DatasheetIRGSL4B60KD1PBF Datasheet (P4-P6)IRGSL4B60KD1PBF Datasheet (P7-P9)IRGSL4B60KD1PBF Datasheet (P10-P12)IRGSL4B60KD1PBF Datasheet (P13-P15)IRGSL4B60KD1PBF Datasheet (P16)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-262-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
2.1 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
11 A
Pd - Verlustleistung:
63 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
RC
Verpackung:
Rohr
Höhe:
9.65 mm
Länge:
11.3 mm
Breite:
4.83 mm
Marke:
Infineon / IR
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
IGBTs
Handelsname:
TRENCHSTOP
Teil # Aliase:
SP001548286
Gewichtseinheit:
0.073511 oz
Tags
IRGSL4, IRGSL, IRGS, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
600V Low-Vceon Non Punch Through Copack IGBT in a TO-262 package
***ical
Trans IGBT Chip N-CH 600V 11A 3-Pin(3+Tab) TO-262 Tube
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:11A; Collector Emitter Saturation Voltage, Vce(sat):2.50V; Power Dissipation, Pd:63W; Package/Case:TO-262; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRGSL4B60KD1PBF
DISTI # IRGSL4B60KD1PBF-ND		Infineon Technologies AGIGBT 600V 11A 63W TO262
RoHS: Compliant
Min Qty: 300
Container: Tube		Limited Supply - Call
    IRGSL4B60KD1PBF
    DISTI # 70018513    		Infineon Technologies AG600V Low-VCEON Non Punch Through COPACK IGBT IN A TO-262 Package
    RoHS: Compliant    		0
    • 300:$2.0800
    IRGSL4B60KD1PBF
    DISTI # 942-IRGSL4B60KD1PBF    		Infineon Technologies AGIGBT Transistors 600V Low-Vceon Non Punch Through
    RoHS: Compliant    		0
      IRGSL4B60KD1PBF
      DISTI # 8640990P      		Infineon Technologies AGIGBT 600V 11A ULTRAFAST DIODE TO-262, TU68
      • 400:£1.1080
      • 200:£1.1730
      • 80:£1.2530
      • 20:£1.4330
      IRGSL4B60KD1PBFInternational Rectifier 150
        Bild Teil # Beschreibung
        IRGSL4B60KD1PBF

        Mfr.#: IRGSL4B60KD1PBF

        OMO.#: OMO-IRGSL4B60KD1PBF

        		 IGBT Transistors 600V Low-Vceon Non Punch Through
        IRGSL4B60KD1PBF

        Mfr.#: IRGSL4B60KD1PBF

        OMO.#: OMO-IRGSL4B60KD1PBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors 600V Low-Vceon Non Punch Through
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3000
        Menge eingeben:
        Der aktuelle Preis von IRGSL4B60KD1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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