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SIHG11N80E-GE3

SIHG11N80E-GE3
Mfr. #:
SIHG11N80E-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 800V 12A TO247AC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHG11N80E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHG11N80E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SIHG1, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-247AC
***et Europe
Transistor MOSFET N-CH 800V 12A 3-Pin TO-247AC
***i-Key
MOSFET N-CH 800V 12A TO247AC
***ark
Mosfet, N-Ch, 800V, 12A, 150Deg C, 179W; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.38Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 12A, 150DEG C, 179W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:179W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:E Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 800V, 12A, 150°C, 179W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.38ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:179W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:E Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHG11N80E-GE3
DISTI # V99:2348_21688013		Vishay IntertechnologiesSIHG11N80E-GE3400
  • 2500:$1.9600
  • 1000:$2.0570
  • 500:$2.3020
  • 250:$2.6390
  • 100:$2.7210
  • 10:$3.3670
  • 1:$4.4363
SIHG11N80E-GE3
DISTI # SIHG11N80E-GE3-ND		Vishay SiliconixMOSFET N-CH 800V 12A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		500In Stock
  • 5000:$1.9811
  • 2500:$2.0584
  • 500:$2.5692
  • 100:$3.0180
  • 25:$3.4824
  • 10:$3.6840
  • 1:$4.1000
SIHG11N80E-GE3
DISTI # 31926983		Vishay IntertechnologiesSIHG11N80E-GE3400
  • 2500:$1.9600
  • 1000:$2.0570
  • 500:$2.3020
  • 250:$2.6390
  • 100:$2.7210
  • 10:$3.3670
  • 4:$4.4363
SIHG11N80E-GE3
DISTI # SIHG11N80E-GE3		Vishay IntertechnologiesTransistor MOSFET N-CH 800V 12A 3-Pin TO-247AC (Alt: SIHG11N80E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.3900
  • 500:€2.4900
  • 50:€2.5900
  • 100:€2.5900
  • 25:€2.8900
  • 10:€3.4900
  • 1:€4.4900
SIHG11N80E-GE3
DISTI # 78AC6521		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 179W,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes989
  • 500:$2.4600
  • 100:$2.8400
  • 50:$3.0400
  • 25:$3.2500
  • 10:$3.4500
  • 1:$4.1600
SIHG11N80E-GE3
DISTI # 78-SIHG11N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs TO-247AC
RoHS: Compliant		508
  • 1:$4.1200
  • 10:$3.4200
  • 100:$2.8100
  • 250:$2.7200
  • 500:$2.4400
SIHG11N80E-GE3
DISTI # 2932926		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 179W
RoHS: Compliant		989
  • 1000:$4.7000
  • 500:$4.9700
  • 250:$5.2700
  • 100:$5.7500
  • 10:$6.6300
  • 1:$7.6000
SIHG11N80E-GE3
DISTI # 2932926		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 179W989
  • 500:£2.1000
  • 250:£2.1200
  • 100:£2.1800
  • 10:£2.6600
  • 1:£3.5900
Bild Teil # Beschreibung
SIHG11N80E-GE3

Mfr.#: SIHG11N80E-GE3

OMO.#: OMO-SIHG11N80E-GE3

 MOSFET 800V Vds 30V Vgs TO-247AC
SIHG11N80E-GE3

Mfr.#: SIHG11N80E-GE3

OMO.#: OMO-SIHG11N80E-GE3-VISHAY

 MOSFET N-CH 800V 12A TO247AC
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von SIHG11N80E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,94 $
2,94 $
10
2,79 $
27,93 $
100
2,65 $
264,60 $
500
2,50 $
1 249,50 $
1000
2,35 $
2 352,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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