T1G4012036-FL

T1G4012036-FL
Mfr. #:
T1G4012036-FL
Hersteller:
Qorvo
Beschreibung:
RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
T1G4012036-FL Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
T1G4012036-FL Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
TriQuint (Qorvo)
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
T1G
Verpackung
Tablett
Teil-Aliasnamen
1096176
Montageart
SMD/SMT
Technologie
GaN SiC
Transistor-Typ
HEMT
Gewinnen
18.4 dB
Ausgangsleistung
24 W
Pd-Verlustleistung
117 W
Arbeitsfrequenz
3.3 GHz
ID-Dauer-Drain-Strom
12 A
Vds-Drain-Source-Breakdown-Voltage
36 V
Transistor-Polarität
N-Kanal
Maximum-Drain-Gate-Spannung
- 2.9 V
Tags
T1G4012036-F, T1G401, T1G4, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Teil # Mfg. Beschreibung Aktie Preis
T1G4012036-FL
DISTI # 772-T1G4012036-FL
QorvoRF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
RoHS: Compliant
0
  • 25:$338.4400
Bild Teil # Beschreibung
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL-318

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS-318

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS-EVB1

Mfr.#: T1G4012036-FS-EVB1

OMO.#: OMO-T1G4012036-FS-EVB1-1190

Neu und Original
T1G4012036-XCC-1-FS

Mfr.#: T1G4012036-XCC-1-FS

OMO.#: OMO-T1G4012036-XCC-1-FS-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von T1G4012036-FL dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
507,66 $
507,66 $
10
482,28 $
4 822,77 $
100
456,89 $
45 689,40 $
500
431,51 $
215 755,50 $
1000
406,13 $
406 128,00 $
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