1N5282TR vs 1N5282 vs 1N5282_T50R

 
PartNumber1N5282TR1N52821N5282_T50R
DescriptionDiodes - General Purpose, Power, Switching Vr/80V Io/200mA T/RDiodes - General Purpose, Power, Switching Vr/80V Io/200mA BULKDIODE GEN PURP 80V 200MA DO35
ManufacturerON SemiconductorON SemiconductorFairchild Semiconductor
Product CategoryDiodes - General Purpose, Power, SwitchingDiodes - General Purpose, Power, SwitchingDiodes, Rectifiers - Single
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseDO-35DO-35-
Peak Reverse Voltage80 V80 V-
Max Surge Current4 A4 A-
If Forward Current200 mA200 mA-
ConfigurationSingleSingle-
Recovery Time4 ns4 ns-
Vf Forward Voltage1.3 V1.3 V-
Ir Reverse Current0.1 uA0.1 uA-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Series1N52821N5282-
PackagingReelBulkTape & Reel (TR) Alternate Packaging
Height1.91 mm1.91 mm-
Length4.56 mm4.56 mm-
Termination StyleAxialAxial-
TypeSmall Signal Switching DiodeSmall Signal Switching Diode-
Width1.91 mm1.91 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Product TypeDiodes - General Purpose, Power, SwitchingDiodes - General Purpose, Power, Switching-
Factory Pack Quantity100005000-
SubcategoryDiodes & RectifiersDiodes & Rectifiers-
Vr Reverse Voltage80 V80 V-
Unit Weight2.821917 oz2.821917 oz-
Package Case--DO-204AH, DO-35, Axial
Mounting Type--Through Hole
Supplier Device Package--DO-35
Speed--Small Signal =
Diode Type--Standard
Current Reverse Leakage Vr--100nA @ 55V
Voltage Forward Vf Max If--900mV @ 100mA
Voltage DC Reverse Vr Max--80V
Current Average Rectified Io--200mA
Reverse Recovery Time trr--4ns
Capacitance Vr F--2.5pF @ 0V, 1MHz
Operating Temperature Junction--175°C (Max)
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