 |  | | |
| PartNumber | 1N8025 | 1N8024-GA | 1N802 |
| Description | Schottky Diodes & Rectifiers 1200V, 1A, 225 Deg C SiC Schottky Rect. | Schottky Diodes & Rectifiers 1200V .75A, 225 D C | |
| Manufacturer | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Product Category | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Diodes, Rectifiers - Single |
| RoHS | N | N | - |
| Product | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes | - |
| Technology | SiC | SiC | - |
| Series | 1N80 | 1N80 | - |
| Packaging | Tube | Bulk | Tube |
| Brand | GeneSiC Semiconductor | GeneSiC Semiconductor | - |
| Product Type | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | - |
| Factory Pack Quantity | 5 | 10 | - |
| Subcategory | Diodes & Rectifiers | Diodes & Rectifiers | - |
| Package Case | - | - | TO-257-3 |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-257 |
| Speed | - | - | No Recovery Time > 500mA (Io) |
| Diode Type | - | - | Silicon Carbide Schottky |
| Current Reverse Leakage Vr | - | - | 10μA @ 1200V |
| Voltage Forward Vf Max If | - | - | 1.74V @ 750mA |
| Voltage DC Reverse Vr Max | - | - | 1200V (1.2kV) |
| Current Average Rectified Io | - | - | 750mA |
| Reverse Recovery Time trr | - | - | 0ns |
| Capacitance Vr F | - | - | 66pF @ 1V, 1MHz |
| Operating Temperature Junction | - | - | -55°C ~ 250°C |