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| PartNumber | 2N2906 | 2N2906A | 2N2906A , SMBJ120A |
| Description | Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 0.6A 0.8W | Bipolar Transistors - BJT PNP Gen Pur SS | |
| Manufacturer | Central Semiconductor | Central Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-18 | TO-18 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 40 V | 60 V | - |
| Collector Base Voltage VCBO | 60 V | 60 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 1.6 V | 2.6 V | - |
| Maximum DC Collector Current | 600 mA | 600 mA | - |
| Gain Bandwidth Product fT | 200 MHz | 200 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| Packaging | Bulk | Bulk | - |
| Brand | Central Semiconductor | Central Semiconductor | - |
| Continuous Collector Current | 600 mA | - | - |
| DC Collector/Base Gain hfe Min | - | 40 at 150 mA, 10 V | - |
| Pd Power Dissipation | 400 mW | 4000 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 2000 | 2000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 2N2906 PBFREE | 2N2906A PBFREE | - |
| Unit Weight | 0.011020 oz | 0.011020 oz | - |
| Series | - | 2N2906 | - |