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| PartNumber | 2N3507 | 2N3507AU4 | 2N3507AL |
| Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | - | N |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | SMD/SMT | Through Hole |
| Package / Case | TO-39-3 | TO-39-3 | TO-5-3 |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Collector Base Voltage VCBO | 80 V | 80 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 500 mV | 1.5 V | - |
| Maximum DC Collector Current | 3 A | 3 A | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| DC Current Gain hFE Max | 175 at 500 mA, 1 V | 175 | - |
| Packaging | Bulk | Tray | Foil Bag |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 35 at 500 mA, 1 V | 35 | - |
| Pd Power Dissipation | 1 W | 1 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Continuous Collector Current | - | 3 A | - |