 |  | | |
| PartNumber | 2N3637 | 2N3637 JANTX | 2N3637(S) |
| Description | Bipolar Transistors - BJT Small-Signal BJT | ||
| Manufacturer | Microchip | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | N | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-39-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 175 V | - | - |
| Collector Base Voltage VCBO | 175 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 300 mV | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| DC Current Gain hFE Max | 150 at 50 mA, 10 VDC | - | - |
| Packaging | Bulk | - | - |
| Brand | Microchip / Microsemi | - | - |
| DC Collector/Base Gain hfe Min | 50 at 50 mA, 10 VDC | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | - | - |