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| PartNumber | 2N3740 | 2N3740A | 2N3740A PBFREE |
| Description | Bipolar Transistors - BJT Leaded Power Transistor | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT 60Vcbo 60Vceo 7.0Vebo 4.0A 25W |
| Manufacturer | Central Semiconductor | Microchip | Central Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | N | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-66-2 | TO-66-2 | TO-66-2 |
| Transistor Polarity | PNP | PNP | PNP |
| Collector Emitter Voltage VCEO Max | 60 V | 60 V | 60 V |
| Collector Base Voltage VCBO | 60 V | 60 V | 60 V |
| Emitter Base Voltage VEBO | 7 V | 7 V | 7 V |
| Collector Emitter Saturation Voltage | 600 mV | 600 V | 0.6 V |
| Maximum DC Collector Current | 10 A | 10 A | - |
| Gain Bandwidth Product fT | 4 MHz | 3 MHz | 4 MHz |
| Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
| Series | 2N3740 | - | 2N37 |
| Packaging | Tube | Tray | Tube |
| Brand | Central Semiconductor | Microchip / Microsemi | Central Semiconductor |
| Continuous Collector Current | 4 A | 4 A | 4 A |
| Pd Power Dissipation | 25 W | 25 W | 25 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 30 | 1 | 30 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 2N3740 PBFREE | - | - |
| Unit Weight | 0.206000 oz | - | - |
| Technology | - | Si | Si |
| Configuration | - | Single | Single |
| Minimum Operating Temperature | - | - 65 C | - 65 C |
| DC Current Gain hFE Max | - | 100 at 250 mA, 1 VDC | 200 at 250 mA, 1 V |
| DC Collector/Base Gain hfe Min | - | 30 at 250 mA, 1 VDC | 30 at 250 mA, 1 V |