2N3772G vs 2N3772 vs 2N3772L

 
PartNumber2N3772G2N37722N3772L
DescriptionBipolar Transistors - BJT 20A 60V 150W NPNTRANS NPN 60V 20A TO-3
ManufacturerON SemiconductorON-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-204-2TO-204AA, TO-3-
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage1.4 V--
Maximum DC Collector Current20 A--
Gain Bandwidth Product fT200 kHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N3772--
Height8.51 mm--
Length39.37 mm--
PackagingTrayTube-
Width26.67 mm--
BrandON Semiconductor--
Continuous Collector Current20 A--
DC Collector/Base Gain hfe Min15--
Pd Power Dissipation150 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight0.408014 oz--
Part Status-Obsolete-
Transistor Type-NPN-
Current Collector (Ic) (Max)-20A-
Voltage Collector Emitter Breakdown (Max)-60V-
Vce Saturation (Max) @ Ib, Ic-4V @ 4A, 20A-
Current Collector Cutoff (Max)-10mA-
DC Current Gain (hFE) (Min) @ Ic, Vce-15 @ 10A, 4V-
Power Max-150W-
Frequency Transition-200kHz-
Operating Temperature---
Mounting Type-Chassis Mount-
Supplier Device Package-TO-3-
Base Part Number-2N3772-
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