2N3868 vs 2N3868S vs 2N3868GJTX

 
PartNumber2N38682N3868S2N3868GJTX
DescriptionBipolar Transistors - BJT Power BJTBipolar Transistors - BJT Power BJT
ManufacturerMicrochipMicrochip-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNN-
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-5-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO4 V--
Collector Emitter Saturation Voltage500 mV--
Maximum DC Collector Current3 mA--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
DC Current Gain hFE Max150 at 1.5 A, 2 VDC--
PackagingBulkBulk-
BrandMicrochip / MicrosemiMicrochip / Microsemi-
DC Collector/Base Gain hfe Min30 at 1.5 A, 2 VDC--
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity11-
SubcategoryTransistorsTransistors-
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