2N5089 vs 2N5089 1R vs 2N5089 NSC

 
PartNumber2N50892N5089 1R2N5089 NSC
DescriptionBipolar Transistors - BJT NPN Gen Pur SS
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max25 V--
Collector Base Voltage VCBO30 V--
Emitter Base Voltage VEBO4.5 V--
Collector Emitter Saturation Voltage500 mV--
Maximum DC Collector Current50 mA--
Gain Bandwidth Product fT50 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N5089--
DC Current Gain hFE Max400--
Height5.33 mm--
Length5.21 mm--
PackagingBulk--
Width4.19 mm--
BrandCentral Semiconductor--
Continuous Collector Current0.05 A--
DC Collector/Base Gain hfe Min400 at 10 mA, 5 V--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Part # Aliases2N5089 PBFREE--
Unit Weight0.016000 oz--
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