2N5190G vs 2N5191 vs 2N5190

 
PartNumber2N5190G2N51912N5190
DescriptionBipolar Transistors - BJT BIP NPN 4A 40VBipolar Transistors - BJT 4A 60V 40W NPNTRANS NPN 40V 4A TO-225AA
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-225-3TO-225-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max40 V60 V-
Collector Base Voltage VCBO40 V60 V-
Emitter Base Voltage VEBO5 V5 V-
Maximum DC Collector Current4 A4 A-
Gain Bandwidth Product fT2 MHz2 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2N5190--
Height11.04 mm11.04 mm (Max)-
Length7.74 mm7.74 mm (Max)-
PackagingBulkBulk-
Width2.66 mm2.66 mm (Max)-
BrandON SemiconductorON Semiconductor-
DC Collector/Base Gain hfe Min2525-
Pd Power Dissipation40 W40 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity500500-
SubcategoryTransistorsTransistors-
Unit Weight0.024022 oz0.068784 oz-
Collector Emitter Saturation Voltage-1.4 V-
Continuous Collector Current-4 A-
Top