2N5770 vs 2N5770X vs 2N5770X_D10Z

 
PartNumber2N57702N5770X2N5770X_D10Z
DescriptionBipolar Transistors - BJT NPN RF Amp/Osc- Bulk (Alt: 2N5770X)- Bulk (Alt: 2N5770X_D10Z)
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max15 V--
Collector Base Voltage VCBO30 V--
Emitter Base Voltage VEBO3 V--
Collector Emitter Saturation Voltage0.4 V--
Maximum DC Collector Current0.05 A--
Gain Bandwidth Product fT900 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N5770--
Height5.33 mm--
Length5.21 mm--
PackagingBulk--
Width4.19 mm--
BrandCentral Semiconductor--
Continuous Collector Current50 mA--
DC Collector/Base Gain hfe Min20--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Part # Aliases2N5770 PBFREE--
Unit Weight0.016000 oz--
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