PartNumber | 2N5886G | 2N5886 PBFREE | 2N5886 |
Description | Bipolar Transistors - BJT 25A 80V 200W NPN | Bipolar Transistors - BJT NPN 80Vcbo 80Vceo 5.0Vebo 25A 200W | Bipolar Transistors - BJT Power BJT |
Manufacturer | ON Semiconductor | Central Semiconductor | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | N |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-204-2 | TO-3-2 | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 80 V | 80 V | - |
Collector Base Voltage VCBO | 80 V | 80 V | - |
Emitter Base Voltage VEBO | 5 V | 5 V | - |
Collector Emitter Saturation Voltage | 1 V | 4 V | - |
Maximum DC Collector Current | 25 A | - | - |
Gain Bandwidth Product fT | 4 MHz | 4 MHz | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 200 C | - |
Series | 2N5886 | 2N58 | - |
Height | 8.51 mm | - | - |
Length | 39.37 mm | - | - |
Packaging | Tray | Tube | Tray |
Width | 26.67 mm | - | - |
Brand | ON Semiconductor | Central Semiconductor | Microchip / Microsemi |
Continuous Collector Current | 25 A | 25 A | - |
DC Collector/Base Gain hfe Min | 20 | 20 at 10 A, 4 V | - |
Pd Power Dissipation | 200 W | 200 W | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 100 | 20 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.424028 oz | - | - |
Technology | - | Si | - |
DC Current Gain hFE Max | - | 100 at 10 A, 4 V | - |