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| PartNumber | 2N6301 PBFREE | 2N6301 | 2N6301-JANTXV |
| Description | Bipolar Transistors - BJT 80Vcbo 80Vceo 5.0Vebo 8.0A 75W | Darlington Transistors Power BJT | RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT |
| Manufacturer | Central Semiconductor | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Darlington Transistors | - |
| RoHS | Y | N | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-66-2 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 3 V | - | - |
| Gain Bandwidth Product fT | 4 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Series | 2N63 | - | - |
| DC Current Gain hFE Max | 18000 at 4 A, 3 V | - | - |
| Packaging | Tube | Tray | - |
| Brand | Central Semiconductor | Microchip / Microsemi | - |
| Continuous Collector Current | 8 A | - | - |
| DC Collector/Base Gain hfe Min | 750 at 4 A, 3 V | - | - |
| Pd Power Dissipation | 75 W | - | - |
| Product Type | BJTs - Bipolar Transistors | Darlington Transistors | - |
| Factory Pack Quantity | 30 | 1 | - |
| Subcategory | Transistors | Transistors | - |