2SB1188T100Q vs 2SB1188T100P vs 2SB1188T100 2SB1188T100R

 
PartNumber2SB1188T100Q2SB1188T100P2SB1188T100 2SB1188T100R
DescriptionBipolar Transistors - BJT PNP 32V 2A SO-89Bipolar Transistors - BJT DVR PNP 32V 2A
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 32 V32 V-
Collector Base Voltage VCBO- 40 V- 32 V-
Emitter Base Voltage VEBO- 5 V5 V-
Collector Emitter Saturation Voltage- 500 mV--
Maximum DC Collector Current- 2 A2 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max39082 at 500 mA, 3 V-
Height1.5 mm1.5 mm-
Length4.5 mm4.5 mm-
PackagingReelReel-
Width2.5 mm2.5 mm-
BrandROHM SemiconductorROHM Semiconductor-
Continuous Collector Current- 2 A- 2 A-
DC Collector/Base Gain hfe Min8282-
Pd Power Dissipation500 mW2000 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight0.004603 oz0.004603 oz-
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