2SB1561T100Q vs 2SB1561T100Q,TR30JBE7R50 vs 2SB1561T100Q,TR30JBE7R50,BB659CE7902

 
PartNumber2SB1561T100Q2SB1561T100Q,TR30JBE7R502SB1561T100Q,TR30JBE7R50,BB659CE7902
DescriptionBipolar Transistors - BJT PNP 60V 2A
ManufacturerROHM Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 60 V--
Collector Base Voltage VCBO- 60 V--
Emitter Base Voltage VEBO- 6 V--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT200 MHz--
Maximum Operating Temperature+ 150 C--
Series2SB1561--
DC Current Gain hFE Max270--
Height1.5 mm--
Length4.5 mm--
PackagingReel--
Width2.5 mm--
BrandROHM Semiconductor--
Continuous Collector Current- 2 A--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.004603 oz--
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