2STR1230 vs 2STR1230 IY vs 2STR1230G

 
PartNumber2STR12302STR1230 IY2STR1230G
DescriptionBipolar Transistors - BJT NPN power transistor
ManufacturerSTMicroelectronics--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO30 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current1.5 A--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2S1230--
Height0.95 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandSTMicroelectronics--
DC Collector/Base Gain hfe Min210--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
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