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| PartNumber | AFT20P060-4GNR3 | AFT20P060-4GN | AFT20P060-4N |
| Description | RF MOSFET Transistors 1805-2170 MHz 6.3 W Avg. 28 V | ||
| Manufacturer | NXP | NXP / Freescale | NXP / Freescale |
| Product Category | RF MOSFET Transistors | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Packaging | Reel | Reel | Reel |
| Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
| Brand | NXP / Freescale | - | - |
| Channel Mode | Enhancement | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | 935322069528 | - | - |
| Unit Weight | 0.108683 oz | 0.108683 oz | 0.108683 oz |
| Series | - | - | AFT20P060_4N |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | OM-780-4 |
| Gain | - | - | 18.9 dB |
| Output Power | - | - | 6.3 W |
| Maximum Operating Temperature | - | - | + 225 C |
| Minimum Operating Temperature | - | - | - 40 C |
| Operating Frequency | - | - | 2 GHz |
| Vgs Gate Source Voltage | - | - | 10 V |
| Vds Drain Source Breakdown Voltage | - | - | 65 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Transistor Polarity | - | - | N-Channel |